[1] Müller F, Birner A, Schilling J, et al. High aspect ratio microstructures based on anisotropic porous materials[J]. Microsystem Technologies, 2002, 8(1): 7-9.
[2] Uhlir A. Electrolytic shaping of germanium and silicon[J]. Bell Syst Tech J, 1956, 35(2): 333-347.
[3] Dash W, Newman R. Intrinsic optical absorption in single-crystal germanium and silicon at 77 K and 300 K[J]. Physical Review, 1955, 99(4): 1151.
[4] Li Bingqian, Zhu Changchun, Liu Junhua. Development of MEMS technique and devices[J]. Element Online China, 2001, 1: 4-8. (in Chinese)
[5] Lehmann V, Foll H. Formation mechanism and properties of electrochemically etched trenches in n-type silicon[J]. Journal of the Electrochemical Society, 1990, 137(2): 653-659.
[6] Beetz Jr C P, Boerstler R W, Steinbeck J, et al. Silicon etching process for making microchannel plates: US, 5997713[P]. 1999.
[7] Lehmann V. The physics of macropore formation in low doped n-type silicon[J]. Journal of the Electrochemical Society, 1993, 140(10): 2836-2843.
[8] Wang Guozheng, Xiong Zheng, Wang Ji, et al. Control technology of channel dimension in the photo-electro-chemical etching for silicon microchannel arrays[J]. Journal of Changchun University of Science and Technology(Natural Science Edition), 2010, 33(3): 59-62. (in Chinese)