• Infrared and Laser Engineering
  • Vol. 44, Issue 9, 2774 (2015)
Liu Xinnan*, Duanmu Qingduo, Wang Guozheng, and Sun Hongtao
Author Affiliations
  • [in Chinese]
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    DOI: Cite this Article
    Liu Xinnan, Duanmu Qingduo, Wang Guozheng, Sun Hongtao. Influences of temperature on the transport properties of electrochemical etching for silicon microchannel[J]. Infrared and Laser Engineering, 2015, 44(9): 2774 Copy Citation Text show less
    References

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    [2] Uhlir A. Electrolytic shaping of germanium and silicon[J]. Bell Syst Tech J, 1956, 35(2): 333-347.

    [3] Dash W, Newman R. Intrinsic optical absorption in single-crystal germanium and silicon at 77 K and 300 K[J]. Physical Review, 1955, 99(4): 1151.

    [4] Li Bingqian, Zhu Changchun, Liu Junhua. Development of MEMS technique and devices[J]. Element Online China, 2001, 1: 4-8. (in Chinese)

    [5] Lehmann V, Foll H. Formation mechanism and properties of electrochemically etched trenches in n-type silicon[J]. Journal of the Electrochemical Society, 1990, 137(2): 653-659.

    [6] Beetz Jr C P, Boerstler R W, Steinbeck J, et al. Silicon etching process for making microchannel plates: US, 5997713[P]. 1999.

    [7] Lehmann V. The physics of macropore formation in low doped n-type silicon[J]. Journal of the Electrochemical Society, 1993, 140(10): 2836-2843.

    [8] Wang Guozheng, Xiong Zheng, Wang Ji, et al. Control technology of channel dimension in the photo-electro-chemical etching for silicon microchannel arrays[J]. Journal of Changchun University of Science and Technology(Natural Science Edition), 2010, 33(3): 59-62. (in Chinese)

    Liu Xinnan, Duanmu Qingduo, Wang Guozheng, Sun Hongtao. Influences of temperature on the transport properties of electrochemical etching for silicon microchannel[J]. Infrared and Laser Engineering, 2015, 44(9): 2774
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