[1] Kleipool Q L, Jongma R T, Gloudemans A M S, et al. In-flight proton-induced radiation damage to SCIAMACHY’s extended-wavelength InGaAs near-infrared detectors[J]. Infrared Phys. Technol.,2007,50(1):30-37.
[2] Cohen M J, Olsen G H. Room-temperature InGaAs camera for NIR imaging[J].Proc. SPIE,1993,1946:436-443.
[3] Wernsman B, Siergiej R R, Link S D, et al. Greater than 20% radiant heat conversion efficiency of a thermophotovoltaic radiator/module system using reflective spectral control[J]. IEEE Trans. Electron Devices,2004,51(3):512-515.
[4] Zhang Y G, Tian Z B, Zhang X J, et al. An innovative gas sensor with on-chip reference using monolithic twin laser[J]. Chin. Phys. Lett.,2007,24(10):2839-2841.
[5] Linga K R, Olsen G H, Ban V S, et al. Dark current analysis and characterization of InxGa1-xAs/InAsyP1-y graded photodiodes with x>0.53 for response to longer wavelengths (>1.7μm)[J]. IEEE J. Lightwave Technol.,1992,10(8):1050-1055.
[6] Kim D S, Forrest S R, Lange M J, et al. A three wavelength infrared focal plane array detector element[J]. IEEE Photonics Technol. Lett,.1994,6(2):235-238.
[7] D’Hondt M, Moerman I, Demeester P. Dark current optimization for MOVPE grown 2.5μm wavelength InGaAs photodetectors[J]. Electron. Lett.,1998,34(9):910-912.
[8] Joshi A, Becker D. High-speed low-noise p-i-n InGaAs photoreceiver at 2μm wavelength[J]. IEEE Photonics Technol. Lett.,2008,20(8):551-553.
[9] Zhang Y G, Gu Y, Wang K, et al. Properties of gas source molecular beam epitaxy grown wavelength extended InGaAs photodectector structures on linear graded InAlAs buffer[J]. Semicon. Sci. Technol.,2008,23(12):125029.
[10] Tian Z B, Gu Y, Wang K, et al. Gas source MBE-grown metamorphic InGaAs photodetectors using InAlAs buffer and cap layers with cut-off wavelength up to 2.7μm[J]. Chin. Phys. Lett.,2008,25(6):2292-2295.
[11] Hudait M K, Lin Y, Wilt D M, et al. High-quality InAsyP1-y step-graded buffer by molecular beam epitaxy[J]. Appl. Phys. Lett.,2003,82(19):3212-3214.
[12] Fewster P F. X-ray diffraction from low-dimensional structures[J]. Semicon. Sci. Technol.,1993,8(11):1915-1934.
[13] Chauveau J M, Androussi Y, Lefebvre A, et al. Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy[J]. J. Appl. Phys.,2003,93(7):4219-4225.
[14] Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for III-V compound semiconductors and their alloys[J]. J. Appl. Phys.,2001,89(11):5815-5875.