• Acta Optica Sinica
  • Vol. 40, Issue 8, 0823002 (2020)
Yameng Hu1, Doudou Zhang2, Jianhua Zhang2、3、*, and Luqiao Yin2、3、**
Author Affiliations
  • 1Microelectronic Research and Development Center, Shanghai University, Shanghai 200444, China
  • 2Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China
  • 3School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, China
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    DOI: 10.3788/AOS202040.0823002 Cite this Article Set citation alerts
    Yameng Hu, Doudou Zhang, Jianhua Zhang, Luqiao Yin. Thermal Stability of CdSe/ZnS Quantum Dot White Light Device[J]. Acta Optica Sinica, 2020, 40(8): 0823002 Copy Citation Text show less

    Abstract

    The absorption and photoluminescence spectra of green and red CdSe/ZnS quantum dot/silicon composite films are measured. The results show that the composite films have stable photoluminescence spectra at different excitation wavelengths and the peaks are located at 527 nm and 628 nm wavelengths, respectively. Two white light emitting diodes (WLED) with different structures are prepared by the combination of the quantum dot/silicon composite films with YAG∶Ce 3+ yellow phosphors, and their optical properties and surface temperatures are measured under different driving currents. For 350 mA driving current, the surface temperature of WLED II is 26.5 ℃ lower than that of WLED I. The aging test is conducted at 55 ℃ temperature and 55% relative humidity, and the results show that the optical performances of these two WLEDs typically remain the same under different driving currents, indicating an excellent stability.
    Yameng Hu, Doudou Zhang, Jianhua Zhang, Luqiao Yin. Thermal Stability of CdSe/ZnS Quantum Dot White Light Device[J]. Acta Optica Sinica, 2020, 40(8): 0823002
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