[1] Wang Jiaxian, Zhang Wenzhen, Xing Qirong et al.. Investigation of Cr4+∶YAG passive mode-locking in a pulsed Nd∶YAG laser[J]. Optics & Laser Technology, 1998, 30(5): 303～305

[2] Renzhong Hua, Liejia Qian, Tingting Zhi et al.. Short pulse generation in a Nd∶YAG laser by silicon[J]. Opt. Commun., 1997, 143(1): 47～52

[3] Zhuo Zhuang, Jiang Qichang, Wang Yonggang et al.. Study on the property of passively Q-switched mode-locked Nd∶Gd0.42Y0.58VO4 laser with GaAs absorber grown at low temperature[J]. Acta Optica Sinaca, 2006, 26(1): 77～80

[4] Cai Zhiqiang, Wen Wuqi, Yao Jianquan et al.. Continuous-wave passively mode-locked diode end-pumped Nd∶YVO4 laser with a semiconductor saturable absorber mirror[J]. Chinese J. Lasers, 2005, A32(6): 734～738

[5] Wang Yonggang, Ma Xiaoyu, Zhang Bingyuan et al.. Passively mode locked diode-end-pumped Nd∶YAG Laser with In0.25 Ga0.75As as output coupler[J]. Chinese J. Semiconductors, 2004, 25(12): 1595～1598

[6] S. C. Huang, S. C. Liu, A. Li et al.. AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser[J]. Opt. Lett., 2007, 32(11): 1480～1482

[7] A. Li, S. C. Liu, K. W. Su et al.. InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers[J]. Appl. Phys B, 2006, 84(3): 429～431

[8] A. Neogi, H. Yoshida, T. Mozume et al.. Enhancement of interband optical nonlinearity by manipulation of intersubband transitions in an undoped semiconductor quantum well[J]. Opt. Commun., 1999, 159(3): 225～229

[9] Ding Wenge, Yu Wei, Yang Yanbin et al.. Bonding structure in silicon nitride thin films containing silicon nano-particles[J]. Spectroscopy and Spectral Analysis, 2006, 26(10): 1798～1801

[10] Deshpande S V, Gulari E, Brown S W et al.. Optical properties of silicon nltride films deposited by hot filament chemical vapor deposition[J]. J. Appl. Phys., 1995, 77(12): 6534～6541

[11] Fu Guangsheng, Ding Wenge, Song Weicai et al.. Microstructure modification of silicon nanograins embedded in silicon nitride thin films[J]. Chin. Phys. Lett., 2006, 23(7): 1926～1928

[12] Kanemitsu Y, Liboshi M, Kushida T. Photoluminescence spectrum of a-Si/SiO2 and c-Si/SiO2 quantum well [J]. J. Luminescence, 2000, 87～89: 463～465

[13] Guo Hengqun, Lin Shangxin, Wang Qiming. Photoluminescence and application of nonlinear optical property of nc-Si-SiO2 films[J]. Chinese J. Semiconductors, 2006, 27(2): 345～349

[14] Yao Weiguo, Yue Lanping, Qi Zhenzhong et al.. Visible photoluminescence of Ge nanocrystallites embedded in SiO2 thin film[J]. J. Functional Material, 1997, 28(5): 477～488

[15] Ma L B, Song R, Huang R et al.. Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film [J]. J. Luminescence, 2007, 126(2): 536～540

[16] Dao V L, Davis J, Hannaford P et al.. Ultrafast carrier dynamics of Si quantum dots embedded in SiN matrix[J]. Appl. Phys. Lett., 2007, 90(8): 1105