[1] J. S. Smith, L. C. Chiu, S. Margalit et al.. A new infrared detector using electron emission from multiple quantum wells[J]. J. Vac. Sci. Technol. B, 1983, 1(2): 376~378
[2] Guan Wenli, Lian Jie, Wang Qingpu et al.. Study on the infrared detector based on the electron wave interference [J]. Semicinductor Optoelectronics, 2009, 30(6): 811~812
[6] H. Xie, J. Katz, W. I. Wang. Infrared absorption enhancement in lihgt-and heavy-hole inverted Ga1-xInxAs/A1-yIInyAs quantum wells[J]. Appl. Phys. Lett., 1991, 59(27): 3601~3603
[7] Y. H. Wang, S. S. Li, J. Chu et al.. Ultralow dark current P-type strained-laye in GaAs/InAlAs quantum well infrared photodetector with background limited performance for T≤100 K[J]. Appl. Phys. Lett., 1994, 64(6): 727~729
[8] Li Shusheng, Xiong Jijun, Zhang Wendong. Study on photoluminescence test for GaAs layers under exernal uniaxial stress[J]. J. Test and Measurement Technology, 2006, 20(5): 435~438
[9] Cheng Xingkui, Zhou Junming, Huang Qi. Interference and reflectance of electron wave at interfaces between the wells and the barriers in superlattice [J]. Science in China (Series A), 2001, 31(11): 1026~1031
[10] Xiao Dingquan, Wang Min. Crystals Physics [M]. Chengdu: Sichuan University Press, 2005. 35~38
[11] S. Adachi. Properties of Aluminium Gallium Arsenide[M].Inspec.London, 1993, 20
[12] Gao Shaowen, Chen Yiqiao, Li Aizhen. Calculation of band structure of Gax In1-xAs/GalnAsP strained quantum wells [J]. J. Functional Materials and Devices, 2002, 8(3): 218~222
[13] Xin Guofeng, Chen Guoying, Hua Jizheng et al.. Wavelength desing for the 941 nm high output power strained single-quantum-well semiconductor lasers [J]. Acta Physica Sinica, 2004, 53(5): 1293~1298