• Acta Optica Sinica
  • Vol. 31, Issue 11, 1104001 (2011)
Zhang Jiaxin*, Xu Liping, Wen Tingdun, and Wang Zhongbin
Author Affiliations
  • [in Chinese]
  • show less
    DOI: 10.3788/aos201131.1104001 Cite this Article Set citation alerts
    Zhang Jiaxin, Xu Liping, Wen Tingdun, Wang Zhongbin. Dependence of the Quantum Well Infrared Photodetector Absorption Wavelength on Uniaxial Stress[J]. Acta Optica Sinica, 2011, 31(11): 1104001 Copy Citation Text show less
    References

    [1] J. S. Smith, L. C. Chiu, S. Margalit et al.. A new infrared detector using electron emission from multiple quantum wells[J]. J. Vac. Sci. Technol. B, 1983, 1(2): 376~378

    [2] Guan Wenli, Lian Jie, Wang Qingpu et al.. Study on the infrared detector based on the electron wave interference [J]. Semicinductor Optoelectronics, 2009, 30(6): 811~812

    [3] Ma Hong, Yi Xinjian, Jin Jinyan et al.. Study on MOVPE growth of 1.3 μm uncooled AlGaInAs/InP strain compensated quantum well lasers[J]. Chinese J. Lasers, 2002, 29(3): 193~196

    [4] Chen Guoying, Ma Zuguang, Wang Xinqiao.Strained InGaAs/AlGaAs double quantum well laser with GRIN-SCH[J]. Acta Optica Sinica, 1999, 19(8): 1084~1088

    [5] Li Shuqiang, Chen Jianghua, Yu Fusheng et al.. Theoretical design method of 980 nm strained single quantum well[J]. Chinese J. Lasers, 2000, 27(8): 682~686

    [6] H. Xie, J. Katz, W. I. Wang. Infrared absorption enhancement in lihgt-and heavy-hole inverted Ga1-xInxAs/A1-yIInyAs quantum wells[J]. Appl. Phys. Lett., 1991, 59(27): 3601~3603

    [7] Y. H. Wang, S. S. Li, J. Chu et al.. Ultralow dark current P-type strained-laye in GaAs/InAlAs quantum well infrared photodetector with background limited performance for T≤100 K[J]. Appl. Phys. Lett., 1994, 64(6): 727~729

    [8] Li Shusheng, Xiong Jijun, Zhang Wendong. Study on photoluminescence test for GaAs layers under exernal uniaxial stress[J]. J. Test and Measurement Technology, 2006, 20(5): 435~438

    [9] Cheng Xingkui, Zhou Junming, Huang Qi. Interference and reflectance of electron wave at interfaces between the wells and the barriers in superlattice [J]. Science in China (Series A), 2001, 31(11): 1026~1031

    [10] Xiao Dingquan, Wang Min. Crystals Physics [M]. Chengdu: Sichuan University Press, 2005. 35~38

    [11] S. Adachi. Properties of Aluminium Gallium Arsenide[M].Inspec.London, 1993, 20

    [12] Gao Shaowen, Chen Yiqiao, Li Aizhen. Calculation of band structure of Gax In1-xAs/GalnAsP strained quantum wells [J]. J. Functional Materials and Devices, 2002, 8(3): 218~222

    [13] Xin Guofeng, Chen Guoying, Hua Jizheng et al.. Wavelength desing for the 941 nm high output power strained single-quantum-well semiconductor lasers [J]. Acta Physica Sinica, 2004, 53(5): 1293~1298

    Zhang Jiaxin, Xu Liping, Wen Tingdun, Wang Zhongbin. Dependence of the Quantum Well Infrared Photodetector Absorption Wavelength on Uniaxial Stress[J]. Acta Optica Sinica, 2011, 31(11): 1104001
    Download Citation