• Journal of Advanced Dielectrics
  • Vol. 13, Issue 1, 2242006 (2023)
Zhilun Lu1、*, Dongyang Sun1, Ge Wang2, Jianwei Zhao3, Bin Zhang3, Dawei Wang3, and Islam Shyha1
Author Affiliations
  • 1School of Computing, Engineering and The Built Environment, Edinburgh Napier University, Edinburgh EH10 5DT, UK
  • 2Department of Materials, University of Manchester, Manchester S13 9PL, UK
  • 3Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
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    DOI: 10.1142/S2010135X22420061 Cite this Article
    Zhilun Lu, Dongyang Sun, Ge Wang, Jianwei Zhao, Bin Zhang, Dawei Wang, Islam Shyha. Energy storage properties in Nd-doped AgNbTaO3 lead-free antiferroelectric ceramics with Nb-site vacancies[J]. Journal of Advanced Dielectrics, 2023, 13(1): 2242006 Copy Citation Text show less

    Abstract

    It is crucial to discover lead-free materials with ultrahigh recoverable energy density (Wrec) that can be employed in future pulse power capacitors. In this work, a highWrecof 4.51 J/cm3 was successfully obtained in lead-free Nd-doped AgNb0.8Ta0.2O3 antiferroelectric ceramics at an applied electric field of 290 kV/cm. It is discovered that Nd doping paired with Nb-site vacancies could stabilize the antiferroelectric phase by lowering the temperatures of the M1–M2 and M2–M3 phase transitions, which leads to higher energy storage efficiency. Furthermore, Nd and Ta co-doping will contribute to the electrical homogeneity and low electrical conductivity, resulting in large breakdown strengths. Aliovalent doping in Ag-site with Nb-site vacancies serves as a novel strategy for the construction of AgNbO3-based ceramics with excellent energy storage performance.It is crucial to discover lead-free materials with ultrahigh recoverable energy density (Wrec) that can be employed in future pulse power capacitors. In this work, a highWrecof 4.51 J/cm3 was successfully obtained in lead-free Nd-doped AgNb0.8Ta0.2O3 antiferroelectric ceramics at an applied electric field of 290 kV/cm. It is discovered that Nd doping paired with Nb-site vacancies could stabilize the antiferroelectric phase by lowering the temperatures of the M1–M2 and M2–M3 phase transitions, which leads to higher energy storage efficiency. Furthermore, Nd and Ta co-doping will contribute to the electrical homogeneity and low electrical conductivity, resulting in large breakdown strengths. Aliovalent doping in Ag-site with Nb-site vacancies serves as a novel strategy for the construction of AgNbO3-based ceramics with excellent energy storage performance.
    Zhilun Lu, Dongyang Sun, Ge Wang, Jianwei Zhao, Bin Zhang, Dawei Wang, Islam Shyha. Energy storage properties in Nd-doped AgNbTaO3 lead-free antiferroelectric ceramics with Nb-site vacancies[J]. Journal of Advanced Dielectrics, 2023, 13(1): 2242006
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