• Photonics Research
  • Vol. 13, Issue 5, 1390 (2025)
Jing Yuan1,2,†, Guichuan Xu1,2,†, Zhengang Lu1,2,*, Xinmeng Zhuang3..., Huanping Zhou3, Heyan Wang1,2, Lin Han1,2 and Jiubin Tan1,2|Show fewer author(s)
Author Affiliations
  • 1Center of Ultra-precision Optoelectronic Instrument Engineering, Harbin Institute of Technology, Harbin 150080, China
  • 2Key Laboratory of Ultra-precision Intelligent Instrumentation (Harbin Institute of Technology), Ministry of Industry and Information Technology, Harbin 150080, China
  • 3Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
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    DOI: 10.1364/PRJ.550483 Cite this Article Set citation alerts
    Jing Yuan, Guichuan Xu, Zhengang Lu, Xinmeng Zhuang, Huanping Zhou, Heyan Wang, Lin Han, Jiubin Tan, "Dual-frequency-range modulator based on a planar nested multiscale metasurface," Photonics Res. 13, 1390 (2025) Copy Citation Text show less
    Function diagram of dual-frequency-range modulator.
    Fig. 1. Function diagram of dual-frequency-range modulator.
    Structure diagram of dual-frequency-range modulator. (a) Structure S1 diagram. (b) Structure L diagram. (c) Structure S2 diagram. (d) The overall structure of the confocal microscope. (e) Local magnification of confocal microscope.
    Fig. 2. Structure diagram of dual-frequency-range modulator. (a) Structure S1 diagram. (b) Structure L diagram. (c) Structure S2 diagram. (d) The overall structure of the confocal microscope. (e) Local magnification of confocal microscope.
    Simulation results of CRR and SRRs of structure S1 in THz range. (a) The THz transmittance of the SRRs structure changes with frequency. (b) The THz transmittance of the CRR structure changes with frequency. (c) The current distribution of the SRRs structure at 0.983 THz. (d) The current distribution of the CRR structure at 0.983 THz.
    Fig. 3. Simulation results of CRR and SRRs of structure S1 in THz range. (a) The THz transmittance of the SRRs structure changes with frequency. (b) The THz transmittance of the CRR structure changes with frequency. (c) The current distribution of the SRRs structure at 0.983 THz. (d) The current distribution of the CRR structure at 0.983 THz.
    Simulation results of structure S1 in THz range. (a) The THz transmittance of structure S1 changes with frequency. (b) The current distribution of structure S1 at 0.66 THz when the conductivity of MAPbBr3 is 0 S/m. (c) The current distribution of structure S1 at 0.66 THz when the conductivity of MAPbBr3 is 6000 S/m.
    Fig. 4. Simulation results of structure S1 in THz range. (a) The THz transmittance of structure S1 changes with frequency. (b) The current distribution of structure S1 at 0.66 THz when the conductivity of MAPbBr3 is 0 S/m. (c) The current distribution of structure S1 at 0.66 THz when the conductivity of MAPbBr3 is 6000 S/m.
    Simulation results of structure S2 peripheral metal wire in THz range. (a) The THz transmittance of structure S2 peripheral metal wire changes with frequency when the conductivity of Si is 0 S/m. (b) The THz transmittance of structure S2 peripheral metal wire changes with frequency when the conductivity of Si is 50,000 S/m. (c) The current distribution of structure S2 peripheral metal wire at 0.80 THz when the conductivity of Si is 0 S/m. (d) The current distribution of structure S2 peripheral metal wire at 0.80 THz when the conductivity of Si is 50,000 S/m.
    Fig. 5. Simulation results of structure S2 peripheral metal wire in THz range. (a) The THz transmittance of structure S2 peripheral metal wire changes with frequency when the conductivity of Si is 0 S/m. (b) The THz transmittance of structure S2 peripheral metal wire changes with frequency when the conductivity of Si is 50,000 S/m. (c) The current distribution of structure S2 peripheral metal wire at 0.80 THz when the conductivity of Si is 0 S/m. (d) The current distribution of structure S2 peripheral metal wire at 0.80 THz when the conductivity of Si is 50,000 S/m.
    Simulation results of structure S2 in THz range. When the conductivity of Si is 0 S/m, (a) the THz transmittance of structure S2 changes with frequency; (b) the current distribution of structure S2 at 0.73 THz when the conductivity of MAPbBr3 is 0 S/m; (c) the current distribution of structure S2 at 0.73 THz when the conductivity of MAPbBr3 is 6000 S/m. When the conductivity of Si is 50,000 S/m, (d) the THz transmittance of structure S2 changes with frequency; (e) the current distribution of structure S2 at 0.73 THz when the conductivity of MAPbBr3 is 0 S/m; (f) the current distribution of structure S2 at 0.73 THz when the conductivity of MAPbBr3 is 6000 S/m.
    Fig. 6. Simulation results of structure S2 in THz range. When the conductivity of Si is 0 S/m, (a) the THz transmittance of structure S2 changes with frequency; (b) the current distribution of structure S2 at 0.73 THz when the conductivity of MAPbBr3 is 0 S/m; (c) the current distribution of structure S2 at 0.73 THz when the conductivity of MAPbBr3 is 6000 S/m. When the conductivity of Si is 50,000 S/m, (d) the THz transmittance of structure S2 changes with frequency; (e) the current distribution of structure S2 at 0.73 THz when the conductivity of MAPbBr3 is 0 S/m; (f) the current distribution of structure S2 at 0.73 THz when the conductivity of MAPbBr3 is 6000 S/m.
    Simulation results of modulator in microwave band. (a) The curve of microwave transmittance of large structure L with frequency. (b) The curve of microwave transmittance of structure S2 with frequency. (c) The curve of microwave transmittance of structure S1 with frequency. (d) The current distribution of the structure L at 0.66 THz when the Si conductivity is 0 S/m. (e) The current distribution of structure S2 at 0.66 THz when the conductivity of Si is 50,000 S/m.
    Fig. 7. Simulation results of modulator in microwave band. (a) The curve of microwave transmittance of large structure L with frequency. (b) The curve of microwave transmittance of structure S2 with frequency. (c) The curve of microwave transmittance of structure S1 with frequency. (d) The current distribution of the structure L at 0.66 THz when the Si conductivity is 0 S/m. (e) The current distribution of structure S2 at 0.66 THz when the conductivity of Si is 50,000 S/m.
    Experimental results for the all-optical dual-frequency-range modulator operating within the 8–18 GHz range. (a) Transmittance curves for sample subjected to varying light intensities (light1) as a function of range. (b) Transmittance curves for sample subjected to varying intensities (light2) as a function of range.
    Fig. 8. Experimental results for the all-optical dual-frequency-range modulator operating within the 8–18 GHz range. (a) Transmittance curves for sample subjected to varying light intensities (light1) as a function of range. (b) Transmittance curves for sample subjected to varying intensities (light2) as a function of range.
    Experimental results for the all-optical dual-frequency-range modulator within the 0.10–1.10 THz range. (a) When the light2 intensity is 0 mW, the experimental curves of the transmittance of the sample with different intensities of light1 are changed with the range. (b) When the intensity of light2 is 1000 mW, the experimental curves of the transmittance of the samples pumped by different intensities of light1 varying with range are obtained.
    Fig. 9. Experimental results for the all-optical dual-frequency-range modulator within the 0.10–1.10 THz range. (a) When the light2 intensity is 0 mW, the experimental curves of the transmittance of the sample with different intensities of light1 are changed with the range. (b) When the intensity of light2 is 1000 mW, the experimental curves of the transmittance of the samples pumped by different intensities of light1 varying with range are obtained.
    All-optical material modulation mechanism. (a) Linear absorption process of Si. (b) Nonlinear absorption process of MAPbBr3 film.
    Fig. 10. All-optical material modulation mechanism. (a) Linear absorption process of Si. (b) Nonlinear absorption process of MAPbBr3 film.
    The near-field distribution of all-optical dual-frequency-range modulator. (a)–(d) The near-field distribution of microwave range under different conductivities of Si. (e)–(h) The near-field distribution of structure S1 in the THz wave range under different MAPbBr3 film conductivities. (i)–(p) The near-field distribution of structure S2 in the THz wave range under different MAPbBr3 film conductivities.
    Fig. 11. The near-field distribution of all-optical dual-frequency-range modulator. (a)–(d) The near-field distribution of microwave range under different conductivities of Si. (e)–(h) The near-field distribution of structure S1 in the THz wave range under different MAPbBr3 film conductivities. (i)–(p) The near-field distribution of structure S2 in the THz wave range under different MAPbBr3 film conductivities.
    Transmittance of all-optical dual-frequency-range modulator in the optical range.
    Fig. 12. Transmittance of all-optical dual-frequency-range modulator in the optical range.
    Jing Yuan, Guichuan Xu, Zhengang Lu, Xinmeng Zhuang, Huanping Zhou, Heyan Wang, Lin Han, Jiubin Tan, "Dual-frequency-range modulator based on a planar nested multiscale metasurface," Photonics Res. 13, 1390 (2025)
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