[1] J Wojtanowski, M Zygmunt, M Kaszczuk, et al. Comparison of 905 nm and 1550 nm semiconductor laser rangefinders' performance deterioration due to adverse environmental conditions. Opto-Electronics Review, 22, 183-190(2014).
[2] Z Y Wen, J J Li, H K et Cao. al. Research progress in high power cascade lasers with tunnel junctions. Optoelectronics, 8, 149-157(2018).
[3] L H Chen, G W Yang, Y X Liu. Development of semiconductor lasers. Chinese Journal of Lasers, 47, 0500001(2020).
[4] D A Vinokurov, V P Konyaev, M A Ladugin, et al. A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD. Semiconductors, 44, 238-242(2010).
[5] J D Hou, C Xiong, Q Qi, et al. Optimization design of epitaxially-stacked multiple-active-region lasers. Acta Optica Sinica, 38, 1014001(2018).
[6] Qiu Y, Xie Y , Wang W, et al. Ultrahighpower highefficiency 905 nm pulsed laser f LiDAR[C]2019 IEEE 4th Optoelectronics Global Conference (OGC). IEEE, 2019.
[7] X Wang, P Crμmp, H Wenzel, et al. Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers. IEEE Journal of Quantμm Electronics, 46, 658-665(2010).
[8] H Wenzel, P Crμmp, A Pietrzak, et al. Theoretical and experimental investigations of the limits to the maximμm output power of laser diodes. New Journal of Physics, 12, 085007(2010).
[9] P Joachim, Z M Li. What causes the pulse power saturation of gas-based broad-area lasers?. IEEE Photonics Technology Letters, 30, 963-966(2018).
[10] J Piprek. On the reliability of pulse power saturation models for broad-area GaAs-based lasers. Optical and Quantμm Electronics, 51, 60(2019).
[11] H Wenzel, A Maaßdorf, C Zink, et al. Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions. Electronics Letters, 16, 445-447(2021).
[12] M R Gokhale, J C Dries, P V Studenkov, et al. High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy. IEEE Journal of Quantμm Electronics, 33, 2266-2276(1997).
[13] Y X Man, L Zhong, X Y Ma, . et al. 975 nm semiconductor lasers with ultra-low internal optical loss. Acta Optica Sinica, 40, 5(2020).
[14] Y Gou, J Wang, Y Cheng, et al. Experimental and modeling study on the high-performance p++-GaAs/n++-GaAs tunnel junctions with silicon and telluriμm co-doped InGaAs quantμm well inserted. Crystals, 10, 1092(2020).