• Acta Photonica Sinica
  • Vol. 32, Issue 1, 65 (2003)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Study of Optimizing Parameters in Preparing VO2 Films by Magnetron Sputtered Method[J]. Acta Photonica Sinica, 2003, 32(1): 65 Copy Citation Text show less
    References

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    [5] Eden D D. Some application involving the semiconductor-to-metal phase transition in VO2.Proc SPIE,1979,185:97~102

    [6] Baber I,Trokman S.High-contrast optical storage in VO2 films. J Appl Phys,1975,46(5):2111~2118

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    [9] Cavanna E,Segaud J P,Livage J. Optical switching of au-doped VO2 Sol-Gel films. Materials Research Bulletin, 1999,34(2):167~177

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    [12] Deki S,Aoi Y,Kajinami A. A novel wet process for the preparation of vanadium dioxide thin-film. Journal of Materials Science, 1997, 32(16):4269~4273

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    [15] Miyazaki H,et al. Influence of unbalanced magnetron and penning ionization for RF reactive magnetron sputtering. Japan Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers(A), 1999,38(1):186~191

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Study of Optimizing Parameters in Preparing VO2 Films by Magnetron Sputtered Method[J]. Acta Photonica Sinica, 2003, 32(1): 65
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