[1] C. Langpoklakpam, A.-C. Liu, K.-H. Chu, L.-H. Hsu, W.-C. Lee, S.-C. Chen, C.-W. Sun, M.-H. Shih, K.-Y. Lee, H.-C. Kuo. Review of silicon carbide processing for power MOSFET. Crystals, 12, 245(2022).

[2] P. Wellmann, N. Ohtani, R. Rupp. Wide bandgap semiconductors for power electronics: Materials, devices, applications(2022).

[3] M.A. Fraga, M. Bosi, M. Negri. Silicon carbide in microsystem technology – thin film versus bulk material. Advanced Silicon Carbide Devices and Processing(2015).

[4] L. Dong, G.S. Sun, J. Yu, G.G. Yan, W.S. Zhao, L. Wang, X.H. Zhang, X.G. Li, Z.G. Wang. Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers. Mater. Sci. Forum, 778–780, 354-357(2014).

[5] H. Matsuhata, N. Sugiyama, B. Chen, T. Yamashita, T. Hatakeyama, T. Sekiguchi. Surface defects generated by intrinsic origins on 4H-SiC epitaxial wafers observed by scanning electron microscopy. Microscopy, 66, 95-102(2016).

[6] P.-C. Chen, W.-C. Miao, T. Ahmed, Y.-Y. Pan, C.-L. Lin, S.-C. Chen, H.-C. Kuo, B.-Y. Tsui, D.-H. Lien. Defect inspection techniques in SiC. Nanoscale Res. Lett., 17, 30(2022).

[7] J. Guo, Y. Yang, B. Raghothamachar, T. Kim, M. Dudley, J. Kim. Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial. J. Crystal Growth, 480, 119-125(2017).

[8] H.-K. Kim, S.I. Kim, S. Kim, N.-S. Lee, H.-K. Shin, C.W. Lee. Relation between work function and structural properties of triangular defects in 4H-SiC epitaxial layer: Kelvin probe force microscopic and spectroscopic analyses. Nanoscale, 12, 8216-8229(2020).

[9] D. Abou-Ras, R. Caballero, C.-H. Fischer, C. Kaufmann, I. Lauermann, R. Mainz, H. Mönig, A. Schöpke, C. Stephan, C. Streeck, S. Schorr, A. Eicke, M. Döbeli, B. Gade, J. Hinrichs, T. Nunney, H. Dijkstra, V. Hoffmann, D. Klemm, V. Efimova, A. Bergmaier, G. Dollinger, T. Wirth, W. Unger, A. Rockett, A. Perez-Rodriguez, J. Alvarez-Garcia, V. Izquierdo-Roca, T. Schmid, P.-P. Choi, M. Müller, F. Bertram, J. Christen, H. Khatri, R. Collins, S. Marsillac, I. Kötschau. Comprehensive comparison of various techniques for the analysis of elemental distributions in thin films. Microsc. Microanal., 17, 728-751(2011).

[10] H. Fujiwara. Spectroscopic ellipsometry: principles and applications(2007).

[11] R.M.A. Azzam, N.M. Bashara. Ellipsometry and polarized light(1987).

[12] D.-M. Rosu, E. Ortel, V.-D. Hodoroaba, R. Kraehnert, A. Hertwig. Ellipsometric porosimetry on pore-controlled TiO2 layers. Appl. Surface Sci., 421, 487-493(2017).

[13] R. Sachse, M. Moor, R. Kraehnert, V.-D. Hodoroaba, A. Hertwig. Ellipsometry-based approach for the characterization of mesoporous thin films for H2 technologies. Adv. Eng. Mater., 24, 2101320(2022).

[14] S. Funke, B. Miller, E. Parzinger, P. Thiesen, A.W. Holleitner, U. Wurstbauer. Imaging spectroscopic ellipsometry of MoS2. J. Phys. Condens. Matter, 28, 385301(2016).

[15] U. Wurstbauer, C. Röling, U. Wurstbauer, W. Wegscheider, M. Vaupel, P.H. Thiesen, D. Weiss. Imaging ellipsometry of graphene. Appl. Phys. Lett., 97, 231901(2010).

[16] P. Braeuninger-Weimer, S. Funke, R. Wang, P. Thiesen, D. Tasche, W. Viöl, S. Hofmann. Fast, noncontact, wafer-scale, atomic layer resolved imaging of two-dimensional materials by ellipsometric contrast micrography. ACS Nano, 12, 8555-8563(2018).

[17] S. Zollner, J.G. Chen, E. Duda, T. Wetteroth, S.R. Wilson, J.N. Hilfiker. Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si. J. Appl. Phys., 85, 8353-8361(1999).

[18] T.E. Tiwald, J.A. Woollam, S. Zollner, J. Christiansen, R.B. Gregory, T. Wetteroth, S.R. Wilson, A.R. Powell. Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry. Phys. Rev. B, 60, 11464-11474(1999).

[19] H. Li, C. Cui, S. Bian, J. Lu, X. Xu, O. Arteaga. Double-sided and single-sided polished 6H-SiC wafers with subsurface damage layer studied by Mueller matrix ellipsometry. J. Appl. Phys., 128, 235304(2020).

[20] R.A. Synowicki. Suppression of backside reflections from transparent substrates. Phys. Status Solidi C, 5, 1085-1088(2008).

[21] D. Malacara. Optical shop testing(2007).

[22] P. De Groot. Principles of interference microscopy for the measurement of surface topography. Adv. Opt. Photonics, 7, 1-65(2015).

[23] P.J. De Groot. The meaning and measure of vertical resolution in optical surface topography measurement. Appl. Sci., 7, 54(2017).