Elena Ermilova, Matthias Weise, Andreas Hertwig. Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers[J]. Journal of the European Optical Society-Rapid Publications, 2023, 19(1): 2023018
Journals >Journal of the European Optical Society-Rapid Publications >Volume 19 >Issue 1 >Page 2023018 > Article
- Journal of the European Optical Society-Rapid Publications
- Vol. 19, Issue 1, 2023018 (2023)
Fig. 1. Schematical representation of imaging ellipsometry setup operating in RCE mode. φ is the angle of incidence.
Fig. 2. Schematical representation of knife edge illumination method (Accurion) using the example of the double-sided polished transparent substrate. The sample area marked with the purple arrows is free of the backside reflections.
Fig. 3. a) Ellipsometric microscope image, b) Ψ-map with selected line profile and c) Δ-map with selected line profile of a triangular defect on 12 μm 4H–SiC epilayer grown on 4H–SiC substrate.
Fig. 4. a) Ψ-map with the histogram of Ψ values and b) Δ-map with the histogram of Δ values over the ROIs (black – ROI-0, red – ROI-1, blue – ROI-2) at λ = 550 nm and AOI = 45°.
Fig. 5. WLIM image and surface profiles of a triangular defect on 12 μm 4H–SiC epilayer grown on 4H–SiC substrate.
Fig. 6. WLIM 3D-images of a) the entire defect and b) the spherical area of defect on 12 μm 4H–SiC epilayer grown on 4H–SiC substrate.
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Table 1. Comparison of the imaging ellipsometry and the white light interference microscopy techniques.
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