Author Affiliations
School of Physics, Changchun University of Science and Technology, Changchun 130022, Jilin , Chinashow less
Fig. 1. Schematic diagram of optical feedback semiconductor laser system
Fig. 2. Schematic diagram of optical injection-optical feedback semiconductor laser system
Fig. 3. Maximum Lyapunov exponent as a function of feedback strength of optical feedback semiconductor laser system
Fig. 4. Attractors of laser intensity in phase space for various linewidth enhancement factor . Simulation method of photoelectric field amplitude-phase decomposition for system when (a) =3 and (c) =8;simulation method of photoelectric field real-imaginary part solution for system when (b) =3 and (d) =8. Two-dimensional phase space consists of laser intensity and carrier density
Fig. 5. Maximum Lyapunov exponent as a function of feedback strength with optical injection-optical feedback semiconductor laser system
Fig. 6. Attractors of laser intensity in space for various linewidth enhancement factor . Simulation method of photoelectric field amplitude-phase decomposition for system when (a) =3 and (c) =8;simulation method of photoelectric field real-imaginary part solution for system when (b) =3 and (d) =8. Two-dimensional phase space consists of laser intensity and carrier density
Fig. 7. Feedback term of semiconductor laser system with optical injection-optical feedback using different decomposition calculation methods. (a) Amplitude-phase decomposition calculation method; (b) real-imaginary part solution calculation method
Fig. 8. Phase feedback terms at different feedback intensities of amplitude-phase simulation method in optical injection-optical feedback semiconductor laser system. (a) =3.106 ns-1; (b) =4.659 ns-1; (c) =6.212 ns-1
Fig. 9. Phase feedback items at different linewidth enhancement factors of amplitude-phase simulation method in optical injection-optical feedback system. (a) =3; (b) =5; (c) =8
Symbol | Parameter | Value |
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| Gain coefficient | 8.40×10-13 m3·s-1 | | Carrier density at transparency | 1.40×10-24 m-3 | | Gain saturation coefficient | 2.5×10-23 | | Photon lifetime | 1.927×10-12 s | | Carrier lifetime | 2.04×10-9 s | | Round-trip time in internal cavity | 8.0×10-12 s | | Reflectivity of laser facet | 0.556 | | Line width enhancement factor | 3.0 | | Optical wavelength of laser | 1.537×10-6 m | | Speed of light | 2.998×108 m·s-1 | | Round-trip time of light in external cavity (feedback delay time)for response laser | 1.501×10-9 s | | Feedback strength | 1.553×10-9 s | | Injection current | 1.098×1033 m-3·s-1 |
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Table 1. Parameters of semiconductor laser system