Bei Li, Changlong Cai, Haifeng Liang, Feihu Fan, Ben Tu. Study on Broad Spectrum Photoelectric Properties of Graphene MIS Junction[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1904001
- Laser & Optoelectronics Progress
- Vol. 59, Issue 19, 1904001 (2022)
Fig. 1. Fabrication process of the device
Fig. 2. Test principle of the device
Fig. 3. Influence of dielectric layer thickness on device performance. (a) Dark current curve of the device; (b) spectral response curve of the device
Fig. 4. Raman spectra of graphene with different layers
Fig. 5. Influence of the number of graphene layers on the device performance. (a) Spectral response of the graphene under zero bias; (b) dark current of the graphene
Fig. 6. I-V curves of the device under different wavelengths of light
Fig. 7. Spectral response curves of Ge heterojunction and pure N-type Ge
Fig. 8. Responsivity of the device at different wavelengths
Fig. 9. Variation curves of device photocurrent and dark current with voltage
Fig. 10. Responsiveness of the device under different bias voltages
Fig. 11. Influence of excitation wavelength and bias voltage on device on/off ratio. (a) Influence of excitation wavelength on switching ratio; (b) influence of bias voltage on switching ratio
Fig. 12. NPDR of the device at different wavelengths
Fig. 13. Response time of the device
Fig. 14. Band diagram of the device without oxide layer between graphene and Ge
Fig. 15. Photoelectric response mechanism of the device. (a) Tunneling; (b) interface coupling
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Table 1. Performance parameters of different devices
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