• Laser & Optoelectronics Progress
  • Vol. 48, Issue 5, 51601 (2011)
Song Yin1、2、*, Zhang Chonghong1、2, Yang Yitao1、2, Li Bingsheng1、2, Ma Yizhun1、2, Gou Jie1、2, Yao Cunfeng1、2, and He Deyan1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/lop48.051601 Cite this Article Set citation alerts
    Song Yin, Zhang Chonghong, Yang Yitao, Li Bingsheng, Ma Yizhun, Gou Jie, Yao Cunfeng, He Deyan. Photoluminescence of Eu-Doped MgO Irradiated with Xe Ions[J]. Laser & Optoelectronics Progress, 2011, 48(5): 51601 Copy Citation Text show less

    Abstract

    Eu-doped MgO single crystals irradiated with 6 MeV Xe ions using 320 kV high voltage experimental platform are investigated by fluorescence spectroscopes. Photoluminescence (PL) intensity of Eu-doped MgO becomes stronger than that of MgO. PL peaks located at 380~550 nm decrease in PL spectra of Eu-doped MgO irradiated with small dose, the intensity of the emission band becomes strong when irradiation dose increases up to 5×1015/cm2. Those photoluminescence phenomena are explained by Fourier transform infrared spectra and Raman spectra.
    Song Yin, Zhang Chonghong, Yang Yitao, Li Bingsheng, Ma Yizhun, Gou Jie, Yao Cunfeng, He Deyan. Photoluminescence of Eu-Doped MgO Irradiated with Xe Ions[J]. Laser & Optoelectronics Progress, 2011, 48(5): 51601
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