• Chinese Journal of Quantum Electronics
  • Vol. 22, Issue 3, 436 (2005)
[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Si掺杂的AlGaInP/GaInP多量子阱光学特性Optical characteristics of AlGaInP/GaInP multiple quantum wells with Si-doping[J]. Chinese Journal of Quantum Electronics, 2005, 22(3): 436 Copy Citation Text show less
    References

    [1] Chong Y L, Meng C W, Wei L, et al. The influence of window layers on the performance of 650 nm AlGaInP/GaInP multinum-well light-emitting diodes [J]. Journal of Crystal Growth, 1999, 200: 382-390.

    [2] Hatakoshi G, Itaya K, Ishikawa M, et al. Short-wavelength InGaAlP visible laser diodes [J]. IEEE J. Quantum Electron., 1991, 27: 1476-1482.

    [3] Hamada H, Shono M, Honda S, et al. AlGaInP visible laser diodes grown on misoriented substrates [J]. IEEE J.Quantum Electron., 1991, 27: 1483-1490.

    [4] Hashimoto J, Tatsuyama K, Shinkai J, et al. Highly stable operation of AlGaInP/GaInP strained multiquantum well visible laser diodes [J]. Electron. Lett., 1992, 28: 1329-1330.

    [5] Mierry P De, Beaumont B, Feltin E, et al. Influence of the Mg procursor on the incorporation of Mg in MOVPE grown GaN [J]. MRS Internet J. Nitride Emicond. Res., 2000, 5: 8.

    [6] Li Shuti, Jiang Fengyi, L Mo Chunlan, et al. The influence of Si-doping to the growth rate and yellow luminescence of GaN grown by MOCVD [J]. J. Luminesecence, 2001, 93: 321-326.

    [7] L Sang-M, S Tae-Y, Lee R T, et al. Effects of Si doping on ordering and domain structures in GaInP [J]. Applied Surface Science, 2000, 158: 223-228.

    [8] Sun Z Z, Yoon S F, Loke K W. Electrical properties of silicon-and beryllium-doped GaInP and (AlGa)InP grown by solid source molecular beam epitaxy [J]. Journal of Crystal Growth, 2002, 235: 8-14.

    [9] Delong M C, Mowbray D J, Hogg A R, et al. Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52Ino.48P [J]. J. Appl. Phys., 1993, 73(10): 5163-5172.

    [10] Schneider R P, Jones J E D, Follstaedt D M. Growth and characterization of GaInP unicompositional disoederorder-disorder quantum wells [J]. Appl. Phys. Lett., 1994, 65(5): 587-590.

    [11] Wang T, Saeki H, Bai J, et al. Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures [J]. Appl. Phys. Lett., 2000, 76: 1737-1739.

    [12] Yong H C, Song J J, Keller S, et al. Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells [J]. Appl. Phys. Lett., 1998, 73: 1128-1130.

    [13] Uchida K, Tang T, Goto S, et al. Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers [J]. Appl. Phys. Lett., 1999, 74: 1153-1155.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Si掺杂的AlGaInP/GaInP多量子阱光学特性Optical characteristics of AlGaInP/GaInP multiple quantum wells with Si-doping[J]. Chinese Journal of Quantum Electronics, 2005, 22(3): 436
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