Simulation of resist development profile using thick resist exposure model

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Opto-Electronic Engineering >Volume 33 >Issue 4 >Page 50 > Article

Opto-Electronic Engineering
Vol. 33, Issue 4, 50 (2006)

Simulation of resist development profile using thick resist exposure model

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]¹, [in Chinese]¹, and [in Chinese]¹

Author Affiliations

¹[in Chinese]

²[in Chinese]

show less

DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Simulation of resist development profile using thick resist exposure model[J]. Opto-Electronic Engineering, 2006, 33(4): 50 Copy Citation Text

show less

References

[1] DILL F H,HORNBERGER W P,HAUGE P S,et al.Characterization of positive photoresist[J].IEEE Transactions on Electron Devices,1975,ED-22(7):445-452.

[2] HENDERSON C L,PANCHOLI S N,CHOWDHURY S A,et al.Photoresist characterization for lithography simulation.2.Exposure Parameter Measurements[J].SPIE,1997,3049:816-828.

[3] LIU Shi-jie,DU Jing-lei,DUAN Xi,et al.Enhanced dill exposure model for photoresist lithography[J].Microelectrionic Engineering,2005,78-79(1-4):490-495.

[4] MACK C A.Development of positive photoresists[J].Journal of the Electrochemical Society,1987,134(1):148-152.

[5] MACK C A.Prolith:a comprehensive optical lithography model[J].SPIE,1985,538:207-220.