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    Journals >Opto-Electronic Engineering >Volume 33 >Issue 4 >Page 50 > Article
    • Opto-Electronic Engineering
    • Vol. 33, Issue 4, 50 (2006)
    Simulation of resist development profile using thick resist exposure model
    [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]1, [in Chinese]1, and [in Chinese]1
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Simulation of resist development profile using thick resist exposure model[J]. Opto-Electronic Engineering, 2006, 33(4): 50 Copy Citation Text show less

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Simulation of resist development profile using thick resist exposure model[J]. Opto-Electronic Engineering, 2006, 33(4): 50
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