Fig. 1. (a) Device structures of the Cu/MXene/SiO₂/W memristor; (b) SEM images of the MXene; (c) I-V curve of electroforming process; (d) I-Vcurve of Set/Reset process (a) Cu/MXene/SiO₂/W忆阻器结构示意图; (b) MXene的SEM照片; (c) 器件电铸I-V曲线; (d) 器件Set/Reset的I-V曲线

Fig. 2. (a) Analog I-V curves under consecutive positive sweep voltage; (b) relationship between conductivity and scanning number under consecutive positive sweep voltage; (c) analog I-V curves under consecutive negative sweep voltage; (d) relationship between conductivity and scanning number under consecutive negative sweep voltage. (a) 连续正向电压扫描下模拟特性I-V曲线; (b) 正向扫描电导与扫描次数的关系; (c) 连续负向电压扫描下模拟特性I-V曲线; (d) 负向扫描电导与扫描次数的关系

Fig. 3. Variation trend of conductance of the device with the continuous positive and negative voltage spike.在连续正向和负向三角尖峰脉冲下, 器件电导的变化趋势

Fig. 4. (a) PPF characteristic curve under two continuous pulse stimuli; (b) relationship between the PPF index and pulse interval.(a) 两个连续脉冲刺激作用下的PPF特性曲线; (b) PPF 指数与脉冲时间间隔的关系

Fig. 5. Synapse-like mechanism of Cu/MXene/SiO₂/W memristor: (a) Diffusion and migration of Cu²⁺ under positive voltage; (b) diffusion and migration of Cu²⁺ under negative voltage; (c) spontaneous rupture of conductive filament when the voltage is removed; (d) residual conductive filaments and newly formed conductive filaments. Cu/MXene/SiO₂/W忆阻器生物响应机理　(a)正偏压下Cu²⁺的扩散与迁移运动; (b)负偏压下Cu²⁺的扩散与迁移运动; (c)撤去偏压, 电导丝的自主破灭; (d)残余电导丝与新形成的电导丝