[3] Gopal Vishnu,Gupta Sudha,Bhan R K,et al. Modeling of dark characteristics of mercury cadmium telluride n+-p junctions [J].Infrared Physics & Technology,2003,(44): 143.
[4] Rais M H,et al. Characterisation of dark current in novel Hg1-xCdx Te mid-wavelength infrared photovoltaic detectors based on n-on-p junction formed by plasma-induced type conversion [J].Crystal Growth,2000,214(15):1106.
[5] Nemirovsky Y,et al. Tunneling and 1/f noise in HgCdTe photodiodes [J].Vac. Sci. Technol. B,1992,10(40):1602.
[6] Mestechkin A,Lee D L,et al. Bake stability of long-wavelength infrared HgCdTe photodiodes [J].Journal of Electronic Materials,1995,24(9): 1183.