• Chinese Journal of Quantum Electronics
  • Vol. 24, Issue 2, 221 (2007)
Bai-wei SUN* and Xiao-ping HU
Author Affiliations
  • [in Chinese]
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    DOI: Cite this Article
    SUN Bai-wei, HU Xiao-ping. Effect of the reflowing process on the I-V characteristics of LWIR HgCdTe photovoltaic detector[J]. Chinese Journal of Quantum Electronics, 2007, 24(2): 221 Copy Citation Text show less
    References

    [3] Gopal Vishnu,Gupta Sudha,Bhan R K,et al. Modeling of dark characteristics of mercury cadmium telluride n+-p junctions [J].Infrared Physics & Technology,2003,(44): 143.

    [4] Rais M H,et al. Characterisation of dark current in novel Hg1-xCdx Te mid-wavelength infrared photovoltaic detectors based on n-on-p junction formed by plasma-induced type conversion [J].Crystal Growth,2000,214(15):1106.

    [5] Nemirovsky Y,et al. Tunneling and 1/f noise in HgCdTe photodiodes [J].Vac. Sci. Technol. B,1992,10(40):1602.

    [6] Mestechkin A,Lee D L,et al. Bake stability of long-wavelength infrared HgCdTe photodiodes [J].Journal of Electronic Materials,1995,24(9): 1183.

    SUN Bai-wei, HU Xiao-ping. Effect of the reflowing process on the I-V characteristics of LWIR HgCdTe photovoltaic detector[J]. Chinese Journal of Quantum Electronics, 2007, 24(2): 221
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