Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes

Zi-Hui Zhang; Jianquan Kou; Sung-Wen Huang Chen; Hua Shao; Jiamang Che; Chunshuang Chu; Kangkai Tian; Yonghui Zhang; Wengang Bi; Hao-Chung Kuo

doi:10.1364/prj.7.0000b1

Journals >Photonics Research >Volume 7 >Issue 4 >Page B1 > Article

Photonics Research
Vol. 7, Issue 4, B1 (2019)

Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes

Zi-Hui Zhang^1、2, Jianquan Kou¹, Sung-Wen Huang Chen³, Hua Shao¹, Jiamang Che¹, Chunshuang Chu¹, Kangkai Tian¹, Yonghui Zhang¹, Wengang Bi¹, and Hao-Chung Kuo^3、4、*

Author Affiliations

¹Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China

²e-mail: zh.zhang@hebut.edu.cn

³Department of Photonics and Institute of Electro-Optical Engineering, Taiwan Chiao Tung University, Hsinchu 30010, China

⁴Department of Electrical Engineering and Computer Sciences and TBSI, University of California at Berkeley, Berkeley, California 94720, USA

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DOI: 10.1364/prj.7.0000b1 Cite this Article Set citation alerts

Zi-Hui Zhang, Jianquan Kou, Sung-Wen Huang Chen, Hua Shao, Jiamang Che, Chunshuang Chu, Kangkai Tian, Yonghui Zhang, Wengang Bi, Hao-Chung Kuo. Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes[J]. Photonics Research, 2019, 7(4): B1 Copy Citation Text

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