• Acta Optica Sinica
  • Vol. 38, Issue 5, 0514005 (2018)
Yuan Dong1、2, Di Wang1, Zhi Wei1, and Tairan Fu、*
Author Affiliations
  • 1 Jilin Key Laboratory of Solid Laser Technology and Application, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • 1 Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO 2 Utilization and Reduction Technology, Department of Energy and Power Engineering, Tsinghua University, Beijing 100084, China
  • 2 Jilin Key Laboratory of Solid Laser Technology and Application, Changchun University of Science and Technology, Changchun, Jilin 130022, China
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    DOI: 10.3788/AOS201838.0514005 Cite this Article Set citation alerts
    Yuan Dong, Di Wang, Zhi Wei, Tairan Fu. Numerical Simulation and Experimental Study of Temperature Evolution of Si-APD Irradiated by Long-Pulse Laser[J]. Acta Optica Sinica, 2018, 38(5): 0514005 Copy Citation Text show less
    Theoretical model of Si-APD irradiated by long-pulse laser
    Fig. 1. Theoretical model of Si-APD irradiated by long-pulse laser
    Relationship between temperature of Si-APD surface center and time. (a) τ=1.0 ms; (b) τ=1.5 ms; (c) τ=2.0 ms; (d) τ=3.0 ms
    Fig. 2. Relationship between temperature of Si-APD surface center and time. (a) τ=1.0 ms; (b) τ=1.5 ms; (c) τ=2.0 ms; (d) τ=3.0 ms
    Relationship between Si-APD surface center point temperature and radial position at characteristic moments with specific energy density. (a) τ=1.0 ms; (b) τ=1.5 ms; (c) τ=2.0 ms; (d) τ=3.0 ms
    Fig. 3. Relationship between Si-APD surface center point temperature and radial position at characteristic moments with specific energy density. (a) τ=1.0 ms; (b) τ=1.5 ms; (c) τ=2.0 ms; (d) τ=3.0 ms
    Diagram of experimental setup of Si-APD irradiated by long-pulse laser
    Fig. 4. Diagram of experimental setup of Si-APD irradiated by long-pulse laser
    Relationship between temperature of Si-APD surface center point irradiated by long-pulse laser and time with different pulse widths. (a) τ=1.0 ms; (b) τ=1.5 ms; (c) τ=2.0 ms; (d) τ=3.0 ms
    Fig. 5. Relationship between temperature of Si-APD surface center point irradiated by long-pulse laser and time with different pulse widths. (a) τ=1.0 ms; (b) τ=1.5 ms; (c) τ=2.0 ms; (d) τ=3.0 ms
    Yuan Dong, Di Wang, Zhi Wei, Tairan Fu. Numerical Simulation and Experimental Study of Temperature Evolution of Si-APD Irradiated by Long-Pulse Laser[J]. Acta Optica Sinica, 2018, 38(5): 0514005
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