Ultrabroadband and multiband infrared/terahertz photodetectors with high sensitivity

Jiaqi Zhu; He Zhu; Mengjuan Liu; Yao Wang; Hanlun Xu; Nasir Ali; Huiyong Deng; Zhiyong Tan; Juncheng Cao; Ning Dai; Huizhen Wu

doi:10.1364/PRJ.430960

Journals >Photonics Research >Volume 9 >Issue 11 >Page 2167 > Article

Photonics Research
Vol. 9, Issue 11, 2167 (2021)

Ultrabroadband and multiband infrared/terahertz photodetectors with high sensitivity

Jiaqi Zhu^1,2,3,†, He Zhu^1,†, Mengjuan Liu², Yao Wang²..., Hanlun Xu², Nasir Ali², Huiyong Deng³, Zhiyong Tan^4,5, Juncheng Cao^4,5, Ning Dai^1,3 and Huizhen Wu^2,*|Show fewer author(s)

Author Affiliations

¹Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

²Zhejiang Province Key Laboratory of Quantum Technology and Devices, Department of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

³State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

⁴Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

⁵Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1364/PRJ.430960 Cite this Article Set citation alerts

Jiaqi Zhu, He Zhu, Mengjuan Liu, Yao Wang, Hanlun Xu, Nasir Ali, Huiyong Deng, Zhiyong Tan, Juncheng Cao, Ning Dai, Huizhen Wu, "Ultrabroadband and multiband infrared/terahertz photodetectors with high sensitivity," Photonics Res. 9, 2167 (2021) Copy Citation Text

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Fig. 1. (a) Schematic for the Ge:P BIB detectors. (b) Partly false-color SEM image for a unit of the detectors; inset: two magnified interdigital cells. (c) The density profile of P atoms in the AL, which was obtained by SIMS measurement.

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Fig. 2. Schematic of the measurement setup for response spectra.

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Fig. 3. Response spectra of detectors (a) #1 and (b) #2 at different biases and 4.5 K. (c) and (d) Peak intensities of the two bands and their ratio versus bias for the spectra in (a) and (b), respectively, where Rp represents the peak intensity, Rp(IR)/Rp(THz) represents the ratio of IR peak intensity to THz one. (e) Peak intensities of the tiny MIR band versus bias of the two detectors. (f) Energy band diagram for the Ge:P BIB detectors to reveal the origin of the ultra-broadband multiband IR/THz response, where CB and VB represent conduction and valence bands respectively, D+ and A− represent ionized donors and ionized acceptors before IR/THz irradiation respectively, and solid and hollow spheres represent photo-generated electrons and holes respectively.

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Fig. 4. (a) Response spectra of detector #3 at different biases and 4.5 K, where the THz response band is left out for all of the spectra with above-150 mV biases since the intensity of this band already saturates; inset: magnified spectra within 3–4.2 μm for all biases. (b) Peak intensity of the IR band versus bias for the spectra in (a). (c) Response spectra at different temperatures and 400 mV of detector #3. (d) Peak intensity of the IR band versus temperature for the spectra in (c).

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Fig. 5. Schematic of the measurement setup for blackbody responses.

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Fig. 6. (a) Relative response spectrum of detector #1 measured at 4.5 K and 150 mV, where the HDPE window was used as a low-pass filter. (b)–(d) Blackbody responsivities versus bias at different temperatures for the three detectors, respectively. (e) Dark I-V characteristics for the three detectors at 4.5 K.

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No.	AL Length	BL Length	AL & BL Width
#1	40 μm	25 μm	550 μm
#2		21 μm
#3		17 μm

Table 1. Structural Parameters of the Fabricated Detectors

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Types	Temperature (K)	Response Range (μm)	$D^{*}$ (Jones) or NEP ( $W / {Hz}^{1 / 2}$ )
Ge:P BIB detector (#1)	4.5	3–4.2	$D^{*} = 2.9 \times 10^{12}$ (at 3.9 μm)
		4.2–28	$D^{*} = 6.8 \times 10^{12}$ (at 16.3 μm)
		40–165	$D^{*} = 9.9 \times 10^{12}$ (at 116.5 μm) or $NEP = 3.6 \times 10^{- 15}$
HgCdTe photodiode [45]	78	3–5	$D^{*} = 6 \times 10^{11}$ (at 4.7 μm)
HgCdTe photodiode [45]	78	8–10	$D^{*} = 3 \times 10^{11}$ (at 8.7 μm)
QWIP [46]	40	4–6	$D^{*} \sim 4 \times 10^{11}$ (at 5 μm)
		8.5–10	$D^{*} \sim 3 \times 10^{11}$ (at 9 μm)
		10–12	$D^{*} \sim 3 \times 10^{11}$ (at 11 μm)
		13–15	$D^{*} \sim 3 \times 10^{11}$ (at 14 μm)
T2SLS photodiode [47]	77	$< 9.5$	$D^{*} \sim 5 \times 10^{11}$ (at 7.9 μm)
T2SLS photodiode [47]	77	$< 13$	$D^{*} \sim 1 \times 10^{11}$ (at 10.2 μm)
QDIP [48]	78	3–6	$D^{*} = 7.1 \times 10^{10}$ (at 5 μm)
QDIP [48]	78	5–11	$D^{*} = 2.6 \times 10^{10}$ (at 10 μm)
InSb/HgCdTe photodiode [65]	77	1–5.5	$D^{*} = 1 \times 10^{11}$ (at 5 μm)
InSb/HgCdTe photodiode [65]	77	5.5–12.5	$D^{*} = 3 \times 10^{10}$ (at 11 μm)
Si:As BIB detector	$\leq 12$ (in theory) [63]	––	$D^{*} \sim 10^{14}$ (15 μm)
Si:As BIB detector	5 (in experiment) [64]	2–37	$D^{*} = 5.2 \times 10^{13}$ (23.8 μm)
QWIP for THz [66]	10	26–100	$D^{*} = 5 \times 10^{7}$ (at 84 μm)
QDIP for THz [67]	4.6	20–75	$D^{*} \sim 10^{8}$ (at 50 μm)
Hot-electron bolometer [68]	5	IR and THz range	$NEP = 3.3 \times 10^{- 14}$