Jiaqi Zhu1、2、3、†, He Zhu1、†, Mengjuan Liu2, Yao Wang2, Hanlun Xu2, Nasir Ali2, Huiyong Deng3, Zhiyong Tan4、5, Juncheng Cao4、5, Ning Dai1、3, and Huizhen Wu2、*
Author Affiliations
1Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China2Zhejiang Province Key Laboratory of Quantum Technology and Devices, Department of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China3State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China4Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China5Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, Chinashow less
DOI: 10.1364/PRJ.430960
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Jiaqi Zhu, He Zhu, Mengjuan Liu, Yao Wang, Hanlun Xu, Nasir Ali, Huiyong Deng, Zhiyong Tan, Juncheng Cao, Ning Dai, Huizhen Wu. Ultrabroadband and multiband infrared/terahertz photodetectors with high sensitivity[J]. Photonics Research, 2021, 9(11): 2167
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Fig. 1. (a) Schematic for the Ge:P BIB detectors. (b) Partly false-color SEM image for a unit of the detectors; inset: two magnified interdigital cells. (c) The density profile of P atoms in the AL, which was obtained by SIMS measurement.
Fig. 2. Schematic of the measurement setup for response spectra.
Fig. 3. Response spectra of detectors (a) #1 and (b) #2 at different biases and 4.5 K. (c) and (d) Peak intensities of the two bands and their ratio versus bias for the spectra in (a) and (b), respectively, where Rp represents the peak intensity, Rp(IR)/Rp(THz) represents the ratio of IR peak intensity to THz one. (e) Peak intensities of the tiny MIR band versus bias of the two detectors. (f) Energy band diagram for the Ge:P BIB detectors to reveal the origin of the ultra-broadband multiband IR/THz response, where CB and VB represent conduction and valence bands respectively, D+ and A− represent ionized donors and ionized acceptors before IR/THz irradiation respectively, and solid and hollow spheres represent photo-generated electrons and holes respectively.
Fig. 4. (a) Response spectra of detector #3 at different biases and 4.5 K, where the THz response band is left out for all of the spectra with above-150 mV biases since the intensity of this band already saturates; inset: magnified spectra within 3–4.2 μm for all biases. (b) Peak intensity of the IR band versus bias for the spectra in (a). (c) Response spectra at different temperatures and 400 mV of detector #3. (d) Peak intensity of the IR band versus temperature for the spectra in (c).
Fig. 5. Schematic of the measurement setup for blackbody responses.
Fig. 6. (a) Relative response spectrum of detector #1 measured at 4.5 K and 150 mV, where the HDPE window was used as a low-pass filter. (b)–(d) Blackbody responsivities versus bias at different temperatures for the three detectors, respectively. (e) Dark I-V characteristics for the three detectors at 4.5 K.
No. | AL Length | BL Length | AL & BL Width |
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#1 | 40 μm | 25 μm | 550 μm | #2 | 21 μm | #3 | 17 μm |
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Table 1. Structural Parameters of the Fabricated Detectors
Types | Temperature (K) | Response Range (μm) | (Jones) or NEP () |
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Ge:P BIB detector (#1) | 4.5 | 3–4.2 | (at 3.9 μm) | 4.2–28 | (at 16.3 μm) | 40–165 | (at 116.5 μm) or | HgCdTe photodiode [45] | 78 | 3–5 | (at 4.7 μm) | 8–10 | (at 8.7 μm) | QWIP [46] | 40 | 4–6 | (at 5 μm) | 8.5–10 | (at 9 μm) | 10–12 | (at 11 μm) | 13–15 | (at 14 μm) | T2SLS photodiode [47] | 77 | | (at 7.9 μm) | | (at 10.2 μm) | QDIP [48] | 78 | 3–6 | (at 5 μm) | 5–11 | (at 10 μm) | InSb/HgCdTe photodiode [65] | 77 | 1–5.5 | (at 5 μm) | 5.5–12.5 | (at 11 μm) | Si:As BIB detector | (in theory) [63] | –– | (15 μm) | 5 (in experiment) [64] | 2–37 | (23.8 μm) | QWIP for THz [66] | 10 | 26–100 | (at 84 μm) | QDIP for THz [67] | 4.6 | 20–75 | (at 50 μm) | Hot-electron bolometer [68] | 5 | IR and THz range | |
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Table 2. Performance for Some Common Types of Multiband (or Broadband) IR or THz Detectors