• Microelectronics
  • Vol. 52, Issue 3, 358 (2022)
GUI Xiaoyan1、2, ZHAO Zhen1、2, CHANG Tianhai3, REN Zhixiong3, JING Lei3, and WANG Xiang3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.220041 Cite this Article
    GUI Xiaoyan, ZHAO Zhen, CHANG Tianhai, REN Zhixiong, JING Lei, WANG Xiang. A 5~6 GHz Wide-Band Fully Integrated CMOS Low Noise Amplifier[J]. Microelectronics, 2022, 52(3): 358 Copy Citation Text show less

    Abstract

    A fully integrated low noise amplifier (LNA) for Wi-Fi 6 (5 GHz) was designed and implemented in a 55 nm standard CMOS process. The design included a source-degenerate cascode amplifier, a balun and a gain switching cell. All inductors were realized on chip. A balun was adopted as the load to perform the single-to-differential conversion. In addition, in order to deal with different input power, the LNA had high gain and low gain mode. Measurement results indicated that the LNA achieved a maximum voltage gain of 202 dB when switched to high gain mode, and the corresponding minimum noise figure was 2.2 dB. In low gain mode, the gain was 15 dB, and the corresponding maximum input -1 dB compression point was -3.2 dBm. The chip occupies a core area of 0.28 mm2, and the static power consumption was 10.2 mW.
    GUI Xiaoyan, ZHAO Zhen, CHANG Tianhai, REN Zhixiong, JING Lei, WANG Xiang. A 5~6 GHz Wide-Band Fully Integrated CMOS Low Noise Amplifier[J]. Microelectronics, 2022, 52(3): 358
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