Polarimetric imaging enhances the ability to distinguish objects from a bright background by detecting their particular polarization status, which offers another degree of freedom in infrared remote sensing. However, to scale up by monolithically integrating grating-based polarizers onto a focal plane array (FPA) of infrared detectors, fundamental technical obstacles must be overcome, including reductions of the extinction ratio by the misalignment between the polarizer and the detector, grating line width fluctuations, the line edge roughness, etc. This paper reports the authors’ latest achievements in overcoming those problems by solving key technical issues regarding the integration of large-scale polarizers onto the chips of FPAs with individual indium gallium arsenide/indium phosphide (InGaAs/InP) sensors as the basic building blocks. Polarimetric and photovoltaic chips with divisions of the focal plane of 540 × 4 pixels and 320 × 256 superpixels have been successfully manufactured. Polarimetric imaging with enhanced contrast has been demonstrated. The progress made in this work has opened up a broad avenue toward industrialization of high quality polarimetric imaging in infrared wavelengths.