• Optoelectronics Letters
  • Vol. 11, Issue 5, 352 (2015)
Yu-zhu GAO1、*, Xiu-ying GONG1, Ran ZHOU1, Ji-jun LI2, Yan-bin FENG2, Makino Takamitsu3, and Kan Hirofumi3
Author Affiliations
  • 1College of Electronics and Information Engineering, Tongji University, Shanghai 201804, China
  • 2Huaxing Infrared Device Company, Xi’an 712099, China
  • 3Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita 434-8601, Japan
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    DOI: 10.1007/s11801-015-5122-y Cite this Article
    GAO Yu-zhu, GONG Xiu-ying, ZHOU Ran, LI Ji-jun, FENG Yan-bin, Takamitsu Makino, Hirofumi Kan. Uncooled InAs0.09Sb0.91photoconductors with cutoff wavelength extended to 11.5 μm[J]. Optoelectronics Letters, 2015, 11(5): 352 Copy Citation Text show less
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    [9] Yuzhu Gao, Xiuying Gong, Takamitsu Makino, Hirofumi Kan, Guanghui Wu, Yanbin Feng, Tadanobu Koyama and Yasuhiro Hayakawa, Advanced Materials Research 668, 664 (2013).

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    [11] GAO Yu-zhu, GONG Xiu-ying, WU Guang-hui, FENG Yan-bin and FANG Wei-zheng, Journal of Optoelectronics ·Laser 21, 1751 (2010). (in Chinese)

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    GAO Yu-zhu, GONG Xiu-ying, ZHOU Ran, LI Ji-jun, FENG Yan-bin, Takamitsu Makino, Hirofumi Kan. Uncooled InAs0.09Sb0.91photoconductors with cutoff wavelength extended to 11.5 μm[J]. Optoelectronics Letters, 2015, 11(5): 352
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