Uncooled InAsSb photoconductors were fabricated. The photoconductors were based on InAs_0.09Sb_0.91and InAs_0.09Sb_0.91thick epilayers grown on InAs substrates by melt epitaxy (ME). Ge immersion lenses were set on the photoconductors. The cutoff wavelength of InAs_0.09Sb_0.91detectors is obviously extended to 11.5 μm, and that of InAs_0.09Sb_0.95detectors is 8.3 μm. At room temperature, the peak detectivity of D_λp^* at wavelength of 6.8 μm and modulation frequency of 1 200 Hz is 1.08×10⁹cm·Hz^1/2·W^-1 for InAs_0.09Sb_0.91photoconductors, the detectivity D^* at wavelength of 9 μm is 7.56×10⁸cm·Hz^1/2·W^-1, and that at 11 μm is 3.92×10⁸cm·Hz^1/2·W^-1. The detectivity of InAs_0.09Sb_0.91detectors at the wavelengths longer than 9 μm is about one order of magnitude higher than that of InAs_0.09Sb_0.95detectors, which rises from the increase of arsenic (As) composition in InAs_0.09Sb_0.91materials.