Study on Packaging-Induced Stress in 4 mm Cavity Length High-Power Single Emitter Semiconductor Laser

ZHANG Yong; YANG Rui-xia; AN Zhen-feng; LIU Xiao-wen; XU Hui-wu

doi:10.3964/j.issn.1000-0593(2014)06-1441-05

Journals >Spectroscopy and Spectral Analysis >Volume 34 >Issue 6 >Page 1441 > Article

Spectroscopy and Spectral Analysis
Vol. 34, Issue 6, 1441 (2014)

Study on Packaging-Induced Stress in 4 mm Cavity Length High-Power Single Emitter Semiconductor Laser

ZHANG Yong^1、*, YANG Rui-xia¹, AN Zhen-feng², LIU Xiao-wen², and XU Hui-wu²

Author Affiliations

¹[in Chinese]

²[in Chinese]

show less

DOI: 10.3964/j.issn.1000-0593(2014)06-1441-05 Cite this Article

ZHANG Yong, YANG Rui-xia, AN Zhen-feng, LIU Xiao-wen, XU Hui-wu. Study on Packaging-Induced Stress in 4 mm Cavity Length High-Power Single Emitter Semiconductor Laser[J]. Spectroscopy and Spectral Analysis, 2014, 34(6): 1441 Copy Citation Text

show less

References

[1] Ma Xiaoyu, Zhong Li. Proceedings of SPIE, 2007, 6824: 1.

[3] Shen Hong, Hu Jun, Yu Xiang, et al. Machine Tools and Manufacture, 2012, 62: 46.

[4] Arif A F M, Al-Omari A S, Yilbasa B S, et al. Journal of Materials Processing Technology, 2011, 211(4): 675.

[5] Tomm J W, Gerhardt A, Muller R, et al. Journal of Applied Physics, 2003, 93(3): 1354.

[6] Gerhardt A, Tomm J W, Muller R, et al. Materials Science and Engineering, 2002, 92: 476.

[7] Tomm J W, Muller R, Barwolff A, et al. Journal of Applied Physics, 1999, 86(3): 1196.

[8] Crump P, Wang Jun, Patterson S, et al. Proceedings of SPIE, 2006, 6104: 77.

[9] Larry A, Scott W. Diode Laser and Photonic Integrated Circuit. USA: John Wiley & Sons, 1995.

[10] Park J, Lee C C. IEEE Transactions on Electron Device Letters, 2005, 26(9): 308.

[12] Tomm J W, Weik F, Gerhardt A, et al. Proceedings of SPIE, 2004, 5336: 125.

[13] Barwolff A, Tomm J W, Muller R, et al. IEEE Transactions on Advanced Packaging, 2000, 23(2): 170.

Download Citation

Save the article for my favorites

Paper Information