• Infrared Technology
  • Vol. 45, Issue 2, 111 (2023)
Jincheng KONG*, Linwei SONG, Wenbin QI, Jun JIANG, Shuren CONG, Yan LIU, Huiyu RONG, Jiangming XU, Dong FANG, Peng ZHAO, and Rongbin JI
Author Affiliations
  • [in Chinese]
  • show less
    DOI: Cite this Article
    KONG Jincheng, SONG Linwei, QI Wenbin, JIANG Jun, CONG Shuren, LIU Yan, RONG Huiyu, XU Jiangming, FANG Dong, ZHAO Peng, JI Rongbin. Progress in LPE Growth of HgCdTe at Kunming Institute of Physics[J]. Infrared Technology, 2023, 45(2): 111 Copy Citation Text show less
    References

    [3] Reddy M, Jin X, Lofgreen D D, et al. Demonstration of high-quality MBE HgCdTe on 8-Inch wafers[J]. Journal of Electronic Materials, 2019, 48(10): 6040-6044.

    [4] Smith E P G, Venzor G M, Newton M D, et al. Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication[J]. Journal of Electronic Materials, 2005, 34(6): 746-753.

    [5] Bratt P R, Johnson S M, Rhiger D R, et al. Historical perspectives on HgCdTe material and device development at Raytheon Vision Systems[C]//Proceedings of SPIE, 2009, 7298: 1044-1078.

    [6] Vilela Mauro F, Hogan Jack, Fennell Brian T, et al. Infinite-melt vertical liquid-phase epitaxy of HgCdTe from Hg solution: from VLWIR to SWIR[J]. Journal of Electronic Materials, 2022, 51: 4731-4741.

    [7] Arkun F Erdem, Edwall Dennis D, Ellsworth Jon, et al. Characterization of HgCdTe films grown on large-area CdZnTe substrates by molecular beam epitaxy[J]. Journal of Electronic Materials, 2017, 46(9): 5374-5378.

    [8] Mosby G, Rauscher B J, Bennett C, et al. Properties and characteristics of the Nancy Grace Roman Space Telescope H4RG-10 detectors[J]. Journal of Astronomical Telescopes Instruments and Systems, 2020, 6(4): DOI: 10.1117/1.JATIS.6.4.046001.

    [9] Atkinson D, Bezawada N, Hipwood L G, et al. Operation and performance of new NIR detectors from SELEX[C]//Proceedings of SPIE, 2012, 8453: 84530U.

    [10] Santailler Jean-Louis, Gout Erik, Journot Timotée, et al. From 5” CdZnTe ingots to high quality (111) CdZnTe substrates for SWIR 2k2 15 μm pitch infrared focal plane arrays manufacturing[C]//Proceedings of SPIE, 2020: DOI: 10.1117/12.2561377.

    [11] Lovecchio P, Wong K, Parodos T, et al. Advances in liquid phase epitaxial growth of Hg1-xCdxTe for SWIR through VLWIR photodiodes [C]//Proceedings of SPIE, 2004, 5564: 65-72.

    [12] Wenisch J, Bitterlich H, Bruder M, et al. Large-format and longwavelength infrared mercury cadmium telluride detectors[J]. Journal of Electronic Materials, 2013, 42(11): 3186-3190.

    [16] Koyama A, Hichiwa A, Hirano R. Recent progress in CdZnTe craystal[J]. Journal of Electronic Materials, 1999, 28(6): 683-687.

    [20] Cathignol A, Brellier D, Gout E, et al. From CdZnTe bulk growth to HgCdTe infra-red detectors: mastering the chain for high-performance and reliable imaging[C]//Proceedings of SPIE, 2018, 10624, DOI: 10.1117/12.2304950.

    [23] Wollrab R, Bauer A, Bitterlich H, et al. Planar n-on-p HgCdTe FPAs for LWIR and VLWIR applications[J]. Journal of Electronic Materials, 2011, 40(8): 1618-1623.

    [24] Tennant W E, Lee Donald, Zandian Majid, et al. MBE HgCdTe technology: a very general solution to IR detection, described by “Rule 07”, a very convenient heuristic[J]. Journal of Electronic Materials, 2008, 37(9): 1406-1410.

    KONG Jincheng, SONG Linwei, QI Wenbin, JIANG Jun, CONG Shuren, LIU Yan, RONG Huiyu, XU Jiangming, FANG Dong, ZHAO Peng, JI Rongbin. Progress in LPE Growth of HgCdTe at Kunming Institute of Physics[J]. Infrared Technology, 2023, 45(2): 111
    Download Citation