The recent progress in the LPE growth of HgCdTe(MCT) epi-layer at the Kunming Institute of Physics (KIP) is reported. The precipitates and inclusion density of the CdZnTe substrate are less than 5×103 cm.2 and the etch pit density (EPD) is less than 4.0×104 cm.2. Owing to the oriented growth technology of the CdZnTe single crystal with..120 mm, the variation of the Zn components in the prepared substrate wafers with..120 mm (111) was less than 0.36%. The maximum size of the HgCdTe films grown by LPE was up to 70 mm×75 mm, with an etch pit density (EPD) of 5×104 cm.2 and DCRC-FWHM less than 35 arcsec (could be lower than 25 arcsec). Over a substrate area of 50 mm×60 mm, the thickness homogeneity of the LPE MCT epi-layer is better than.d=.1.25.m, and a cut-off wavelength homogeneity better than..=.0.1.m is achieved for the LWIR MCT epi-layers; that of the MWIR epi-layers are.1.m and.0.05.m, respectively. Due to the improvement of material technology, which effectively increases the yield of low-cost MCT IRFPAs at KIP, high-performance LW/VLW/HOT IRFPAs and large array detectors such as 2048×2048 and 4096×4096 based on MCT/CZT have been developed.