[1] Meyer J R,Hoffman C A,Bartoli F J, et al. Advanced magneto-transport characterization of LPE-grown Hg1-xCdxTe by quantitative mobility spectrum analysis[J]. Journal of Electronic Materials,1996,25(8):1157-1164.
[2] Antorszewski J, Seymour D J, Faraone L, et al. Magneto-transport characterization using quantitative maobiliy-spectrum analysis[J]. Journal of Electronic Materials,1995,24(9):1255-1262.
[3] Lou L F, Frye W H. Hall effect and resistivity in liquid-phase-epitaxial layers of HgCdTe[J]. J. Appl. Phys,1984,56(8):2253-2267.
[4] Schmit J, Kruse P, Stelzer E. Development of a 0.1eV bandgap semiconductor at the Honeywell Research Center[C]. Proc. of SPIE,2009,7298:7298R-1.
[5] Bratt P R, Johnson S M, Rhiger D R. Historical perspective on HgCdTe material and device development at Raytheon Vision Systems[C]. Proc. of SPIE,2009,7298:7298U-1.
[6] Beck W A, Anderson J R. Determination of electrical transport properties using a novel magnetic field-dependent hall technique[J]. J.Appl.Phys,1987,62(2):541-545.