Very-narrow-gap HgCdTe single crystals were multicarrier semiconductor material with multiple electron and hole species in the conduction band. Especially, for p-type HgCdTe single crystals, the evaluation based on conventional measurements at a single magnetic field could lead to erroneous conclusions because of the large ratio of the electron mobility to hole mobility (b=μe/μh≈102). Variable-magnetic-field Hall measurements were performed on bulk-grown HgCdTe single crystals at various temperatures. The mobility spectrum analysis (MSA) technique were employed in this paper. An accurate determination of both the carriers type and the carriers mobility usually involves multicarrier characterization. At the same time, the effect of the autoxidation for the HgCdTe multicarrier system was investigated.