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[7] Pezeshki B, Thomas D, Harris J S Jr. Optimization of modulation ratio and insertion loss in reflective electroabsorption modulators. Applied Physics Letters, 1990, 57(15): 1491-1493
[8] Bar-Joseph I, Sucha G, Miller D A B, Chemla D S, Miller B I, Koren U. Self-electro-optic effect device and modulation convertor with InGaAs/InP multiple quantum wells. Applied Physics Letters, 1988, 52(4): 51-53
[9] Goossen K W, Yan R H, Cunningham J E, Jan W Y. AlxGa1 - xAs- AIAs quantum well surface-normal electro absorption modulators operating at visible wavelengths. Applied Physics Letters, 1991, 59(15): 1829-1831
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[19] Kane E O. Band structure of indium antimonide. Journal of Physics and Chemistry of Solids, 1957, 1(4): 249-261
