Contents
2012
Volume: 5 Issue 1
17 Article(s)

Export citation format
A special issue on Silicon Photonics
Zhiping ZHOU
Frontiers of Optoelectronics
  • Publication Date: Jan. 01, 1900
  • Vol.5 Issue, 1 1 (2012)
Ge quantum dots light-emitting devices
Jinsong XIA, Takuya MARUIZUMI, and Yasuhiro SHIRAKI
Si photonics becomes one of the research focuses in the field of photonics. Si-based light-emitting devices are one of the most important devices in this field. In this paper, we review the Si-based light-emitting devices fabricated by embedding Ge self-assembled quantum dots into optical microcavities. Ge self-assembl
Frontiers of Optoelectronics
  • Publication Date: Jan. 01, 1900
  • Vol.5 Issue, 1 13 (2012)
Designs and experiments on infrared two-dimensional silicon photonic crystal slab devices
Lin GAN, and Zhiyuan LI
Photonic crystal (PhC) has offered a powerful means to mold the flow of light and manipulate lightmatter interaction at subwavelength scale. Silicon has a large refraction index and low loss in infrared wavelengths, which makes it an important optical material. And silicon has been widely used for integrated photonics
Frontiers of Optoelectronics
  • Publication Date: Jan. 01, 1900
  • Vol.5 Issue, 1 21 (2012)
Effect of dipole location on profile properties of symmetric surface plasmon polariton mode in Au/Al2O3/Au waveguide
Gongli XIAO, Xiang JI, Linfei GAO, Xingjun WANG, and Zhiping ZHOU
Frontiers of Optoelectronics
  • Publication Date: Jan. 01, 1900
  • Vol.5 Issue, 1 63 (2012)
High speed optical modulation in Ge quantum wells using quantum confined stark effect
Yiwen RONG, Yijie HUO, Edward T. FEI, Marco FIORENTINO, Michael R.T. TAN, Tomasz OCHALSKI, Guillaume HUYET, Lars THYLEN, Marek CHACINSKI, Theodore I. KAMINS, and James S. HARRIS
Frontiers of Optoelectronics
  • Publication Date: Jan. 01, 1900
  • Vol.5 Issue, 1 82 (2012)
Annealing effect on optical and electronic properties of silicon rich amorphous silicon-carbide films
Shuxin LI, Yunjun RUI, Yunqing CAO, Jun XU, and Kunji CHEN
A series of Si-rich amorphous silicon carbide (a-SiC:H) thin films were deposited in conventional plasma enhanced chemical vapor deposition system with various gas ratio R = [CH4]/[SiH4]. The microstructural, optical and electronic properties of as-deposited films were investigated in this study. It was found that opti
Frontiers of Optoelectronics
  • Publication Date: Jan. 01, 1900
  • Vol.5 Issue, 1 107 (2012)