PECVD DEPOSITION OF BOROPHOSPHOSILICATE GLASS USED FOR SILICA-BASED PLANAR LIGHTWAVE CIRCUITS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 24 >Issue 5 >Page 390 > Article

Journal of Infrared and Millimeter Waves
Vol. 24, Issue 5, 390 (2005)

PECVD DEPOSITION OF BOROPHOSPHOSILICATE GLASS USED FOR SILICA-BASED PLANAR LIGHTWAVE CIRCUITS

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. PECVD DEPOSITION OF BOROPHOSPHOSILICATE GLASS USED FOR SILICA-BASED PLANAR LIGHTWAVE CIRCUITS[J]. Journal of Infrared and Millimeter Waves, 2005, 24(5): 390 Copy Citation Text

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References

[1] Li Y P, Henry C H. Silica-based optical integrated circuits,[ J]IEEE. Proc. J. Optoelectron., 1998, 143(5): 263-280.

[2] Kawachi M. Silica waveguides on silicon and their application to integrated-optic components [ J ]. Opt. Quantum Electron. , 1990, 22: 391-416.

[4] Hsieh S W, Chang C Y, Hsu S C. Characteristics of lowtemperature and low-energy plasma-enhanced chemical vapor deposited SiO2 [ J ]. J. Appl. Phys. 1993,74 (4):2638-2648.

[5] Ahmed K , Geisert C. Borophosphosilicate glass crystal induction and suppression [ J ]. J. Vac. Sci. Technol. A,1992, 10(2): 313-315.

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