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    Journals >Journal of Semiconductors >Volume 40 >Issue 8 >Page 080204 > Article
    • Journal of Semiconductors
    • Vol. 40, Issue 8, 080204 (2019)
    Controlling magnetism in 2D CrI3 by electrostatic doping
    Zheng Han
    Author Affiliations
  • Institute of Metal Research, CAS, Shenyang, China
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    DOI: 10.1088/1674-4926/40/8/080204 Cite this Article
    Zheng Han. Controlling magnetism in 2D CrI3 by electrostatic doping[J]. Journal of Semiconductors, 2019, 40(8): 080204 Copy Citation Text show less
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    Zheng Han. Controlling magnetism in 2D CrI3 by electrostatic doping[J]. Journal of Semiconductors, 2019, 40(8): 080204
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