High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO4 crystal

Jie Guo; Wei Wang; Hua Lin; Xiaoyan Liang

doi:10.1017/hpl.2019.16

Journals >High Power Laser Science and Engineering >Volume 7 >Issue 2 >Page 02000e35 > Article

High Power Laser Science and Engineering
Vol. 7, Issue 2, 02000e35 (2019)

High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO₄ crystal

Jie Guo¹, Wei Wang^1、2, Hua Lin¹, and Xiaoyan Liang^1、†,*

Author Affiliations

¹State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1017/hpl.2019.16 Cite this Article Set citation alerts

Jie Guo, Wei Wang, Hua Lin, Xiaoyan Liang. High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO₄ crystal[J]. High Power Laser Science and Engineering, 2019, 7(2): 02000e35 Copy Citation Text

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$Parameter separatrix (colored blue and yellow) and curve of $\text{NRT}^{\text{MAX}}$ (colored bold black). The red star indicates the optimum working point for 100 kHz repetition rate operation.$

Fig. 1. Parameter separatrix (colored blue and yellow) and curve of $\text{NRT}^{\text{MAX}}$ (colored bold black). The red star indicates the optimum working point for 100 kHz repetition rate operation.

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Schematic of the experimental setup: PP, pulse picker; TFP, thin-film polarizer; FR, Faraday rotator; HWP, half-wave plate; QWP, quarter-wave plate; PC, Pockels cell. The beam inside the RA cavity propagates along the 15 mm long $a$-axis of the Nd:GdVO4 crystal.

Fig. 2. Schematic of the experimental setup: PP, pulse picker; TFP, thin-film polarizer; FR, Faraday rotator; HWP, half-wave plate; QWP, quarter-wave plate; PC, Pockels cell. The beam inside the RA cavity propagates along the 15 mm long $a$-axis of the Nd:GdVO₄ crystal.

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Fig. 3. CW output power versus absorbed pump power.

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Fig. 4. (a) RA regime output power versus absorbed pump power; (b) the last five intracavity signals of the RA.

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Fig. 5. Intensity autocorrelation traces of the oscillator and RA output.

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Fig. 6. (a) Long-term power stability measurement of the RA output. (b) RA output beam quality.

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Parameter	Nd:YAG	Nd:YVO	Nd:GdVO₄
Pump wavelength (nm)	808 869 885	808 880 888	808 880 888
Emission wavelength (nm)	1064	1064	1063
Emission bandwidth (nm)	0.45	0.8	1.25
Efficient emission cross-section
Efficient emission cross-section	at 1064 nm ($10^{-19}~\text{cm}^{2}$)	2.8	13.5 ($\unicode[STIX]{x1D70B}$)	7.6 ($\unicode[STIX]{x1D70B}$)
6.5 ($\unicode[STIX]{x1D70E}$)	at 1064 nm ($10^{-19}~\text{cm}^{2}$)	2.8	1.2 ($\unicode[STIX]{x1D70E}$)
Upper state lifetime ($\unicode[STIX]{x03BC}\text{s}$)	230	91	90
Nonlinear refractive index
($10^{-16}~\text{cm}^{2}/\text{W}$)	8.1	14.7	12.6
Thermal conductivity at 300 K
Thermal conductivity at 300 K	($\text{W}/\text{mK}$)	14	5.1 (a)	10.1 (a)
5.23 (c)	($\text{W}/\text{mK}$)	14	11.4 (c)
Absorption cross-section at
Absorption cross-section at	808 nm ($10^{-19}~\text{cm}^{2}$)	0.41	2.7 ($\unicode[STIX]{x1D70B}$)	5.2 ($\unicode[STIX]{x1D70B}$)
1.2 ($\unicode[STIX]{x1D70E}$)	808 nm ($10^{-19}~\text{cm}^{2}$)	0.41	1.23 ($\unicode[STIX]{x1D70E}$)
Refractive index at 1064 nm	1.820	2.165 (e)	2.192 (e)
Refractive index at 1064 nm	1.820	1.957 (o)	1.972 (o)

Table 1. Basic properties of three Nd-doped single crystals (see Refs. [35–42]).

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Parameter	Value	Parameter	Value
Stable state small signal
gain $G_{0}$	1.91	Round trip loss $l$	0.04
Emission cross-section		Upper state lifetime
$\unicode[STIX]{x1D70E}$ ($\text{cm}^{2}$)	$7.6\times 10^{-19}$	$T_{1}$ ($\unicode[STIX]{x03BC}\text{s}$)	90