Characterization of Mo-doped ZnO thin films prepared by sol-gel method

Jing-zhen SHAO; Wei-wei DONG; Ru-hua TAO; Zan-hong DENG; Shu ZHOU; Xiao-dong FANG

[1] Jiang X, Wong F L, Fung M K, et al. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices ［J］. Appl. Phys. Lett., 2003, 83: 1875-1877.

[2] Kim H, Gilmore C M, Horwitz J S, et al. Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices ［J］. Appl. Phys. Lett., 2000, 76: 259-261.

[3] Matsubara K, Fons P, Iwata K, et al. ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications ［J］. Thin Solid Films, 2003, 431-432: 369-372.

[4] Chen X L, Xu B H, Xue J M, et al. Boron-doped zinc oxide thin films for large-area solar cells grown by metal organic chemical vapor deposition ［J］. Thin Solid Films, 2007, 515: 3753-3759.

[5] Sittinger V, Ruske F, Pflug A, et al. Optical on-line monitoring for the long-term stabilization of a reactive mid-frequency sputtering process of Al-doped zinc oxide films ［J］. Thin Solid Films, 2010, 518: 3115-3118.

[6] Yun E J, Jung J W, Lee B C. Effects of O2 fraction on the properties of Al-doped ZnO thin films treated by high-energy electron beam irradiation ［J］. J. Alloy. Compd., 2010, 496: 543-547.

[7] Gong L, Lu J, Ye Z. Transparent and conductive Ga-doped ZnO films grown by RF magnetron sputtering on polycarbonate substrates ［J］. Sol. Energy Mater. Sol. Cells, 2010, 94: 937-941.

[8] Ma Q B, Ye Z Z, He H P, et al. Influence of Ar/O2 ratio on the properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering ［J］. Mater. Lett., 2007, 61: 2460-2463.

[9] Peng L P, Fang L, Yang X F, et al. Effect of annealing temperature on the structure and optical properties of In-doped ZnO thin films ［J］. J. Alloy. Compd., 2009, 484: 575-579.

[10] Parthiban S, Ramamurthi K, Elangovan E, et al. Spray deposited molybdenum doped indium oxide thin films with high near infrared transmittance and carrier mobility ［J］. Appl. Phys. Lett., 2009, 94: 212101.

[11] Li X, Miao W, Zhang Q, et al. The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target ［J］. Semicond. Sci. Technol., 2005, 20: 823-828.

[12] Xiu X, Pang Z, Lü M, et al. Transparent conducting molybdenum-doped zinc oxide films deposited by RF magnetron sputtering ［J］. Appl. Surf. Sci., 2007, 253: 3345-3348.

[13] Gupta R K, Ghosh K, Mishra S R, et al. Structural, optical and electrical characterization of highly conducting Mo-doped In2 O3 thin films ［J］. Appl. Surf. Sci., 2008, 254: 4018-4023.

[14] Gupta R K, Ghosh K, Patel R, et al. Effect of thickness on optoelectrical properties of Mo-doped indium oxide films ［J］. Appl. Surf. Sci., 2008, 255: 3046-3048.

[15] Sukkar M H, Tuller H L. Defect equilibria in ZnO varistor materials ［J］. Adv. Ceram., 1984, 7: 71-90.

[16] Schoenes J, Kanazawa K, Kay E. Band and hopping conduction in high-resistivity ZnO ［J］. J. Appl. Phys., 1977, 48: 2537-2542.

[17] Shao J, Dong W, Li D, et al. Metal-semiconductor transition in Nb-doped ZnO thin films prepared by pulsed laser deposition ［J］. Thin Solid Films, 2010, 518: 5288-5291.

[18] Dong B Z, Hu H, Fang G J, et al. Comprehensive investigation of structural, electrical, and optical properties for ZnO:Al films deposited at different substrate temperature and oxygen ambient ［J］. J. Appl. Phys., 2008, 103: 073711.

[19] Hideaki A, Akio S, Tatsuhiko M, et al. Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition ［J］. Thin Solid Films, 2003, 445: 263-267.