Yao Nie, Youyun Wang, Xueqin Wu, Yu Fang. Ultrafast Carrier Dynamics in n-Type and Semi-Insulating 6H-SiC Crystals[J]. Laser & Optoelectronics Progress, 2019, 56(6): 063201
- Laser & Optoelectronics Progress
- Vol. 56, Issue 6, 063201 (2019)
Fig. 1. Experimental light path diagram of femtosecond TAS
Fig. 2. Linear absorption spectra of n-type (N-doped) and SI (V-doped) 6H-SiC wafers
Fig. 3. Transient absorption spectra under different time delays. (a) n-6H-SiC; (b) SI-6H-SiC
Fig. 4. Time-resolved transient absorption (TRTA) responses for typical probe wavelengths. (a) n-6H-SiC; (b) SI-6H-SiC
Fig. 5. Schematic of energy band and carrier relaxation in 6H-SiC wafers under pump excitation at 3.4 eV
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Table 1. Common impurity concentrations in 6H-SiC samples determined by SIMS1017 cm-3
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Table 2. Photo-physical parameters obtained by measuring and fitting of TAS responses of different 6H-SiC wafers
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