• Infrared and Laser Engineering
  • Vol. 36, Issue 5, 705 (2007)
[in Chinese]*, [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. Morphologic and optical properties of In0.5Ga0.5As/In0.5Al0.5As strain-coupled quantum dots[J]. Infrared and Laser Engineering, 2007, 36(5): 705 Copy Citation Text show less
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    [6] Krishna Sanjay,Forman Darren,Annamalai Senthil,et al.Demonstration of a 320 ×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors[J].Appl Phys Lett,2005,86:193501(1-3).

    [7] RYZHII V.Negative differential photoconductivity in quantum dot infrared photodetectors[J].Appl Phys Lett,2001,78:3346-3348.

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    [15] WANG Y,DJIE H S,OOI B S.Group-Ⅲ intermixing in InAs/InGaAIAs quantum dots-in-well[J].Appl Phys Lett,2006,88:111110.

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    [in Chinese], [in Chinese], [in Chinese]. Morphologic and optical properties of In0.5Ga0.5As/In0.5Al0.5As strain-coupled quantum dots[J]. Infrared and Laser Engineering, 2007, 36(5): 705
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