In this paper, the characteristics and parameters of the tunable diode laser fabricated by HUVG method are reported. At 12 K, the pulse threshold current density is about 370 A/cm2 and OW threshold current density is about 440 A/cm2. At 13K, current tuning rate is about 0.15 cm-1/mA; at 400 mA, temperature tuning rate is about 2.3