High power 2.1 μm GaInSb/AlGaAsSb quantum well laser diodes with high power conversion efficiency

Song Yuzhi; Song Jiakun; Zhang Zuyin; Li Kangwen; Xu Yun; Song Guofeng; Chen Lianghui

doi:10.3788/irla201645.0505003

[1] Choi H K, Eglash S J. Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy [J]. Applied Physics Letters, 1991, 59(10): 1165.

[2] Zhang Yonggang, Gu Yi, Li Yaoyao, et al. Mid-infrared semiconductor light sources, detectors and its applications [J]. Infrared and Laser Engineering, 2011, 40(10): 1846-1850. (in Chinese)

[3] Tian Chaoqun, Wei Donghan, Liu Lei, et al. Etching of GaSb-based materials of mid-infrared semiconductor laser [J]. Infrared and Laser Engineering, 2013, 42(12): 3363-3366. (in Chinese)

[4] Choi H K, Eglash S J. High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density [J]. Applied Physics Letters, 1992, 61(10): 1154.

[5] Razeghi M, Tournié E, Brown G J, et al. High-performance single-spatial mode GaSb type-I laser diodes around 2.1 μm [C]//SPIE, 2013, 8993: 899319.

[6] Xu Yun, Wang Yongbin, Zhang Yu, et al. High power 2-μm room-temperature continuous wave operation of GaSb-based strained quantum-well lasers [J]. Chin Phys B, 2013, 22(9): 094208.

[7] Zhang Yonggang, Zheng Yanlan, Lin Chun, et al. Continuous wave performance and tunability of MBE grown 2.1 μm InGaAsSb/AlGaAsSb MQW lasers [J]. Chinese Physics Letters, 2006, 23: 2262.

[8] Zhang Yu, Wang Yongbin, Xu Yun, et al. High-temperature (T=80 ℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laser[J]. Journal of Semiconductors, 2012, 33(4):044006.

[9] Salhi A, Abdelmajid A. Self-consistent analysis of quantum well number effects on the performance of 2.3-μm GaSb-based quantum well laser diodes[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2009, 5: 918.

[10] Hilzensauer S, Giesin C, Schleife J, et al. High power diode lasers between 1.8 μm and 3.0 μm for military applications [C]//SPIE, 2013, 8898: 88980U.

[11] Liang R, Chen J F, Kipshidze G, et al. High power 2.2 μm diode lasers with heavily strained active region [J]. IEEE Photon Technol Lett, 2011, 23(10): 603.

[12] Rahimi N, Aragon A A, Romero O S, et al. Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb [J]. APL Materials, 2013, 1(6): 062105.