Study on the design and preparing technology of ion beam sputtering wideband absorption thin film

Jiang Yugang; Liu Xiaoli; Liu Huasong; Liu Dandan; Wang Lishuan; Chen Dan; Jiang Chenghui; Ji Yiqin

doi:10.3788/irla201948.0221003

[1] Lossek K A, Krause C, Arguirov T, et al. Characterization of thin-film a-Si:H/μc-Si:H tandem solar cells on glass substrates [J]. Crystal Research and Technology, 2013, 4(5): 279-286.

[2] Qiang L, Yao R H. Analysis of temperature effect on a-Si:H thin film transistors[J]. Solid-State Electronics, 2013, 81(3): 13-18.

[3] Zhang Jinzhong, Zhang Wenyu, Xie Zhenyu, et al. Growth and optimization of hydrogenated amorphous Si films for thin film transistor fabrication[J]. Chinese Journal of Vacuum Science and Technology, 2012, 32(11): 991-995. (in Chinese)

[4] Li Zhi, Li Wei, Cai Haihong, et al. Effects of low argon dilution ratio on the nanocrystallization and properties of a-Si:H thin films[J]. Journal of Nanoscience and Nanotechnology, 2010, 10(11): 7667-7670.

[5] Cui Min, Deng Jinxiang, Li Ting, et al. Study on preparation and spectroscopic ellipsometry of a-Si:H thin films[J]. Vacuum, 2014, 51(2): 48-51. (in Chinese)

[6] Li Xinli, Gu Jinhua, Gao Haibo. Real time and ex situ spectroscopic ellipsometry analysis microcrystalline silicon thin films growth[J]. Acta Physica Sinica, 2012, 61(3): 036802. (in Chinese)

[7] Liu Huasong, Yang Xiao, Liu Dandan, et al. Physical model of optical contants of SiO2 thin films[J]. Infrared and Laser Engineering, 2017, 46(9): 0921003. (in Chinese)

[8] Mendeleyev V Ya, Skovorodko S N, Lubnin E N, et al. Optical constants of silicon in near infrared region[J]. Applied Physics Letters, 2008, 93(13): 2994669.

[9] Wang Lishuan, Yang Xiao, Liu Dandan, et al. Annealing effect of the optical properties of tantalum oxide thin film prepared by ion beam sputtering[J]. Infrared and Laser Engineering, 2018, 47(3): 0321004. (in Chinese)

[10] Netrvalova M, Prusakova L, Mullerova J, et al. Optical properties of amorphous hydrogenated and microcrystalline silicon films prepared by plasma enhanced chemical vapor deposition and re-crystallized at moderate temperatures[J]. Phys Status Solidi C, 2011, 8(9): 2680-2683.

[11] Herth E, Desré H, Algré E, et al. Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications[J]. Microelectronics Reliability, 2012, 52(1): 141-146.