Photoluminescence of a high strain InGaAs single quantum well with GaAsP barriers

Huibo Yuan; Lin Li; Te Li; Jing Zhang; Yong Wang; Zhongliang Qiao; Zhanguo Li; Yi Qu; Xiaohui Ma; Guojun Liu

doi:10.3788/COL201513.S21602

Journals >Chinese Optics Letters >Volume 13 >Issue Suppl. >Page S21602 > Article

Chinese Optics Letters
Vol. 13, Issue Suppl., S21602 (2015)

Photoluminescence of a high strain InGaAs single quantum well with GaAsP barriers

Huibo Yuan, Lin Li^*, Te Li, Jing Zhang, Yong Wang, Zhongliang Qiao, Zhanguo Li, Yi Qu, Xiaohui Ma, and Guojun Liu

Author Affiliations

National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

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DOI: 10.3788/COL201513.S21602 Cite this Article Set citation alerts

Huibo Yuan, Lin Li, Te Li, Jing Zhang, Yong Wang, Zhongliang Qiao, Zhanguo Li, Yi Qu, Xiaohui Ma, Guojun Liu. Photoluminescence of a high strain InGaAs single quantum well with GaAsP barriers[J]. Chinese Optics Letters, 2015, 13(Suppl.): S21602 Copy Citation Text

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Abstract

To investigate the relationship between indium content and optical properties during epitaxial growth of an InGaAs/GaAs single quantum well (SQW), simulation and experiments are demonstrated. The epitaxial growth is demonstrated with low-pressure metal–organic chemical vapor deposition. Photoluminescence (PL) spectroscopy is applied to research the PL properties at room temperature. The

In / (In + Ga)

varies from 0.24 to 0.36, resulting in an increasing of the full-width half-maximum (FWHM) with the wavelength exhibiting a red-shift. A SQW with an

In / (In + Ga)

of 0.36 is manufactured, where a FWHM of 23.9 meV is obtained. An InGaAs SQW sandwiched by GaAsP is prepared, which is observed to exhibit a diminished FWHM of 17.0 meV with the wavelength revealing a blue-shift.