• Infrared and Laser Engineering
  • Vol. 51, Issue 5, 2021G007 (2022)
Qiuhua Wang1, Ming Li2, Pingping Qiu2, Wei Pang1, Yiyang Xie1, Qiang Kan2, and Chen Xu1
Author Affiliations
  • 1Key Laboratory of Optoelectronics Technology, Ministry of Education, Department of Information, Beijing University of Technology, Beijing 100124, China
  • 2Institute of Semiconductors, Chinese Academic of Sciences, Beijing 100083, China
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    DOI: 10.3788/IRLA2021G007 Cite this Article
    Qiuhua Wang, Ming Li, Pingping Qiu, Wei Pang, Yiyang Xie, Qiang Kan, Chen Xu. Study of high-temperature operating oxide-confined 894 nm VCSEL with fundamental transverse mode emission[J]. Infrared and Laser Engineering, 2022, 51(5): 2021G007 Copy Citation Text show less
    Structure schematic of VCSEL
    Fig. 1. Structure schematic of VCSEL
    Simulation results of active region gain and cavity mode changes under different temperatures
    Fig. 2. Simulation results of active region gain and cavity mode changes under different temperatures
    Microscope image of VCSEL
    Fig. 3. Microscope image of VCSEL
    894 nm oxide-confined VCSEL P-I-V characteristic curve, the inset is the microscopic image of the oxide aperture
    Fig. 4. 894 nm oxide-confined VCSEL P-I-V characteristic curve, the inset is the microscopic image of the oxide aperture
    Spectral characteristics of the device under different current injection when the ambient temperature is 55 ℃
    Fig. 5. Spectral characteristics of the device under different current injection when the ambient temperature is 55 ℃
    Spectral characteristic curve of 894 nm oxidized VCSEL under different ambient temperatures and different current injection
    Fig. 6. Spectral characteristic curve of 894 nm oxidized VCSEL under different ambient temperatures and different current injection
    Optical and electrical characteristics of the device operating at 894.6 nm under different temperatures
    Fig. 7. Optical and electrical characteristics of the device operating at 894.6 nm under different temperatures
    Far-field spot distribution of the device
    Fig. 8. Far-field spot distribution of the device
    Qiuhua Wang, Ming Li, Pingping Qiu, Wei Pang, Yiyang Xie, Qiang Kan, Chen Xu. Study of high-temperature operating oxide-confined 894 nm VCSEL with fundamental transverse mode emission[J]. Infrared and Laser Engineering, 2022, 51(5): 2021G007
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