[2] Gorelick J L, Ladbury R, Kanchawa L. The effects of neutron irradiation on gamma sensitivity of linear integrated circuits[J]. IEEE Trans Nucl Sci, 51, 3679-3685(2004).

[5] Barnaby H J, Smith S K, Schrimpf R D. Analytical model for proton radiation effects in bipolar devices[J]. IEEE Trans Nucl Sci, 49, 2643-2649(2003).

[6] Barnaby H J, Schrimpf R D, Sternberg A L. Proton radiation response mechanisms in bipolar analog circuits[J]. IEEE Trans Nucl Sci, 48, 2074-2080(2001).

[7] Li Xingji, Liu Chaoming, Rui Erming. Simultaneous and sequential radiation effects on NPN transistors induced by protons and electrons[J]. IEEE Trans Nucl Sci, 59, 625-633(2012).

[8] Li Xingji, Geng Hongbin, Liu Chaoming. Combined radiation effects of protons and electrons on NPN transistors[J]. IEEE Trans Nucl Sci, 57, 831-836(2010).

[9] Wang Chenhui, Bai Xiaoyan, Chen Wei. Simulation of synergistic effects on lateral PNP bipolar transistors induced by neutron and gamma irradiation[J]. Nucl Instrum Meth A(2015).

[10] Song Yu, Zhang Ying, Liu Yang. Mechanism of synergistic effects of neutron-and gamma-ray-radiated PNP bipolar transistors[J]. ACS Appl Electron Mater(2019).

[11] Sze S M, Kwok K N. Physics of semiconduct devices[M]. 3rd ed. New Yk: WileyInterscience, 2006.

[13] Claeys C, Simoen E. Radiation effects in advanced semiconduct materials devices[M]. SpringerBerlin Heidelberg GmbH, 2002.

[14] Kosier S L, Shrimpf R D, Nowlin R N. Charge separation for bipolar transistors[J]. IEEE Trans Nucl Sci, 40, 1276-1285(1993).