Kai Wang, Xueyang Lü, Kunlin Wu, Jiaming Feng, Xiaoqiang Fan, Junjie Li, Guixia Yang, Yi Lu, Dong Qiu, Dehui Zou. Effects of different sequential neutron/gamma irradiation on current gain of bipolar devices[J]. High Power Laser and Particle Beams, 2020, 32(4): 044001
- High Power Laser and Particle Beams
- Vol. 32, Issue 4, 044001 (2020)
Fig. 1. Experimental flow chart
Fig. 2. Curves of current gain h FEvs collector current I C of A-NPN BJTs
Fig. 3. Curves of current gain h FEvs collector current I C of B-PNP BJTs
Fig. 4. Diagram of electron flow and hole flow when NPN transistor is working in positive active region
Fig. 5. Curves of base current I B vs. collector current I C of A-NPN BJTs and B-PNP BJTs
Fig. 6. Schematic diagram of irradiation effect of neutron first followed by γ incidence (taking PNP bipolar transistor as an example)
Fig. 7. Schematic diagram of irradiation effect of γ first followed by neutron incidence ( taking PNP bipolar transistor as an example)
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