Zhi-Cheng HUANG, Yao YAO, Jun PEI, Jin-Feng DONG, Bo-Ping ZHANG, Jing-Feng LI, Peng-Peng SHANG, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and Thermoelectric Property of n-type SnS[J]. Journal of Inorganic Materials, 2019, 34(3): 321

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- Journal of Inorganic Materials
- Vol. 34, Issue 3, 321 (2019)

. XRD patterns of the SnS1-x Clx (x =0, 0.02, 0.03, 0.04, 0.05, 0.06) bulks at (a) 20°-70°, (b) 31.3°-31.8°and (c) 56.5°-56.8°, which was measured along the hot pressing direction

. Lattice parameters (dots) and cell volume (histogram) of the SnS1-x Clx (x =0, 0.02, 0.03, 0.04, 0.05, 0.06) bulks samples along with those of the standard card (dashed lines) for SnS (PDF#39-0354)

. (a) The back-scattered electron (BSE) image of the polished surface, (b) EDS spectra taken from position 1 and 2 and (c)~(d) elemental distributions of S, Sn for x =0.03 sample

. SEM images of the fractured surface morphologies for (a) x =0, (b) x =0.02, (c) x =0.03, (d) x =0.04, (e) x =0.05, (f) x =0.06, and (g) change of grain size (circle) and relative density (square) with x for SnS1-x Clx bulk samples

. Temperature dependence of (a) Seebeck coefficient, (b) relation curve of Hall carrier concentration - Seebeck coefficient, (c) electrical conductivity, and (d) power factor for SnS1-x Clx (x =0, 0.02, 0.03, 0.04, 0.05, 0.06)

. Temperature dependence of (a) thermal diffusivity, (b) total thermal conductivity, (c) lattice thermal conductivity, and (d) ZT for SnS1-x Clx (x =0, 0.02, 0.03, 0.04, 0.05 0.06)
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Table 1. Room temperature nominal composition, real composition, Hall coefficient, Hall carrier concentration, and mobility for SnS1-x Clx

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