Preparation and Thermoelectric Property of n-type SnS

Zhi-Cheng HUANG; Yao YAO; Jun PEI; Jin-Feng DONG; Bo-Ping ZHANG; Jing-Feng LI; Peng-Peng SHANG; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

doi:10.15541/jim20180293

Journals >Journal of Inorganic Materials >Volume 34 >Issue 3 >Page 321 > Article

Journal of Inorganic Materials
Vol. 34, Issue 3, 321 (2019)

Preparation and Thermoelectric Property of n-type SnS

Zhi-Cheng HUANG^1、2, Yao YAO¹, Jun PEI^1、2, Jin-Feng DONG², Bo-Ping ZHANG¹, Jing-Feng LI², Peng-Peng SHANG³, [in Chinese]^1、2, [in Chinese]¹, [in Chinese]^1、2, [in Chinese]², [in Chinese]¹, [in Chinese]², and [in Chinese]³

Author Affiliations

¹1. The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

²2. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

³3. College of Chemistry and Material Science, Shandong Agricultural University, Tai'an 271018, China

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DOI: 10.15541/jim20180293 Cite this Article

Zhi-Cheng HUANG, Yao YAO, Jun PEI, Jin-Feng DONG, Bo-Ping ZHANG, Jing-Feng LI, Peng-Peng SHANG, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and Thermoelectric Property of n-type SnS[J]. Journal of Inorganic Materials, 2019, 34(3): 321 Copy Citation Text

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. XRD patterns of the SnS_1-_xCl_x(x=0, 0.02, 0.03, 0.04, 0.05, 0.06) bulks at (a) 20°-70°, (b) 31.3°-31.8°and (c) 56.5°-56.8°, which was measured along the hot pressing direction

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. Lattice parameters (dots) and cell volume (histogram) of the SnS_1-_xCl_x(x=0, 0.02, 0.03, 0.04, 0.05, 0.06) bulks samples along with those of the standard card (dashed lines) for SnS (PDF#39-0354)

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. (a) The back-scattered electron (BSE) image of the polished surface, (b) EDS spectra taken from position 1 and 2 and (c)~(d) elemental distributions of S, Sn for x=0.03 sample

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$SEM images of the fractured surface morphologies for (a) x=0, (b) x=0.02, (c) x=0.03, (d) x=0.04, (e) x=0.05, (f) x=0.06, and (g) change of grain size (circle) and relative density (square) with x for SnS1-xClx bulk samples$

. SEM images of the fractured surface morphologies for (a) x=0, (b) x=0.02, (c) x=0.03, (d) x=0.04, (e) x=0.05, (f) x=0.06, and (g) change of grain size (circle) and relative density (square) with x for SnS_1-_xCl_x bulk samples

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. Temperature dependence of (a) Seebeck coefficient, (b) relation curve of Hall carrier concentration - Seebeck coefficient, (c) electrical conductivity, and (d) power factor for SnS_1-_xCl_x (x=0, 0.02, 0.03, 0.04, 0.05, 0.06)

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. Temperature dependence of (a) thermal diffusivity, (b) total thermal conductivity, (c) lattice thermal conductivity, and (d) ZT for SnS_1-_xCl_x(x=0, 0.02, 0.03, 0.04, 0.05 0.06)

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x	Nominal comp.	Real comp.	R_H/(cm³•C^-1)	n_H/cm^-3	μ_H/(cm²•V^-1•s^-1)
0	SnS	SnS_0.97	1.55×10³	4.03×10¹⁵	1.29
0.02	SnS_0.98Cl_0.02	SnS_0.95Cl	1.43×10⁵	4.35×10¹³	2.83
0.03	SnS_0.97Cl_0.03	SnS_0.97Cl_0.005	-9.9×10³	6.31×10¹⁴	2.34
0.04	SnS_0.96Cl_0.04	SnS_0.95Cl_0.009	-7.19×10³	8.68×10¹⁴	3.04
0.05	SnS_0.95Cl_0.05	SnS_0.93Cl_0.021	-9.22×10²	6.78×10¹⁵	3.18
0.06	SnS_0.94Cl_0.06	SnS_0.92Cl_0.022	-8.6×10²	7.27×10¹⁵	3.60

Table 1. Room temperature nominal composition, real composition, Hall coefficient, Hall carrier concentration, and mobility for SnS_1-_xCl_x

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