This paper describes an n+-p InSb/Hg1-xCdxTe heterojunction prepared by using liquid-phase epitaxial method. The growing system used consists of a horizontal slider boat in the open-tube filled with H2. Growth temperature is between 300-400℃ and cooling rate is slower than 8℃/min. The grown film has a mirror-like surface with a thickness of l5-25μm. EDAX-SEM analysis shows that the interface between layer and substrate is straight and the compositional transition is very sharp.