Fig. 1. Schematic diagrams of coupled scattering model between grid metasurface and microdefects. (a) 3D structure; (b) section structure; (c) top view structure

Fig. 2. Comparison of MRTD and FDTD results

Fig. 3. H_z and H_ymagnetic field distributions on a single crystal silicon grid metasurface containing defective particles. (a) Local to global component of H_zmagnetic field on a single crystal silicon grid metasurface; (b) magnetic field H_ydistribution of single crystal silicon grid meta-section with different defect depths

Fig. 4. Schematic diagram of physical parameters of defect characteristics

Fig. 5. Angular distribution of RCS of silicon grid metasurface buried with defect particles with different radius

Fig. 6. Angular distribution of RCS of silicon grid with defects of different buried depths

Fig. 7. Angular distribution of RCS of single crystal silicon grid with defects of different spacings

Table 1. Connection coefficients of different orders of Daubechies scale function