• Chinese Journal of Quantum Electronics
  • Vol. 22, Issue 6, 941 (2005)
[in Chinese]*, [in Chinese], and [in Chinese]
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  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese]. Population inversion ratio of the upper state for broad-band Erbium-doped tellurite-based fiber amplifier[J]. Chinese Journal of Quantum Electronics, 2005, 22(6): 941 Copy Citation Text show less
    References

    [1] Sun Y.Sulhoff, J.W. Srivastava, A.K. 80 nm ultra-wideband erbium-doped silica fibre amplifier[J].Electron. Lett, 1997 ,33(23):1965-1967

    [2] A Mori, T Sakamoto, K Kobayashi,et al.1.58-um Broad-Band Erbium-Doped Tellurite Fiber Amplifier[J].JOURNAL OF LIGHTWAVE TECHNOLOGY., 2002,20(5):794-799

    [3] Ono H, Sakamoto T,Mori A,et al. An erbrium-doped tellurite fiber amplifer for WDM system with dispersion-shifted fibers[J].IEEE Photo.Technol.Lett.,2002,14(8):1070-1072

    [4] A Mori,Ono H,K Kobayashi,et al.980nm band Er3+-doped tellurite-based fiber amplifer with low-noise figure of less than 4.5dB[J].Electron. Lett,2002 ,38(23):1419-1420

    [5] Lopez-Barbero, A P;Arellano-Espinoza, W A;Fragnito, H L,et al. Tellurite-based optical fiber amplifier analysis using the finite-element method[J].Microwave and Optical Technology Letters.,2000,25(2):103-107,

    [7] Wang J S, Vogel E M ,Snitzer e. Tellurite glass: a new candidate for fiber devices[J].Opt.Matt.,1994,3:187-203

    [in Chinese], [in Chinese], [in Chinese]. Population inversion ratio of the upper state for broad-band Erbium-doped tellurite-based fiber amplifier[J]. Chinese Journal of Quantum Electronics, 2005, 22(6): 941
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